Microdefects related to donors in the denuded zone formed after (1200–700 °C) annealing were investigated using spreading resistance, etching, and transmission electron microscope methods. It is found that donors are generated about 1×1014 cm−3 even at the surface of the denuded zone and are closely related to small oxygen precipitates rather than dislocation dipoles corresponding to etch pits. Donor formation at 700 °C annealing is concluded to be concerned with small oxygen precipitates nucleated at embryo sites in addition to carbon sites.
REFERENCES
1.
T. Y.
Tan
, E. E.
Gardner
, and W. K.
Tice
, Appl. Phys. Lett.
30
, 175
(1977
).2.
3.
K.
Yamamoto
, S.
Kishino
, Y.
Matsushita
, and T.
Iizuka
, Appl. Phys. Lett.
36
, 195
(1980
).4.
C. W. Pearce, L. E. Katz, and T. E. Seidel, in Semiconductor Silicon 1981, edited by H. R. Huff and R. J. Kriegler (Electrochemical Society, Pennington, New Jersey, 1981), p. 705.
5.
6.
7.
A.
Ohsawa
, R.
Takizawa
, K.
Honda
, A.
Shibatomi
, and S.
Ohkawa
, J. Appl. Phys.
53
, 5733
(1982
).8.
1978 Annual Book of ASTM Standards, Part 43 (America Society for Testing Materials, Philadelphia, 1978), F121–76.
9.
1978 Annual Book of ASTM Standards, Part 43 (America Society for Testing Materials, Philadelphia, 1978), F123‐74.
10.
11.
12.
13.
Y.
Matsushita
, S.
Kishino
, and M.
Kanamori
, Jpn. J. Appl. Phys.
19
, L101
(1980
).14.
K. Honda, A. Ohsawa, R. Takizawa, and N. Toyokura (unpublished).
15.
H. F. Wolf, Silicon Semiconductor Data (Pergamon, Oxford, 1969), p. 326.
16.
R. A. Craven, in Semiconductor Silicon 1981, edited by H. R. Huff and R. J. Kriegler (Electrochemical Society, Pennington, New Jersey, 1981), p. 254.
17.
J.
Gass
, H. H.
Muller
, H.
Stussi
, and S.
Schweitzer
, J. Appl. Phys.
51
, 2030
(1980
).18.
Y. Takano and M. Maki, in Semiconductor Silicon 1973, edited by H. R. Huff and R. R. Burgess (Electrochemical Society, Princeton, New Jersey, 1973), p. 469.
19.
H. J.
Hrostowksi
and R. H.
Kaiser
, J. Phys. Chem. Solids
9
, 214
(1959
).20.
21.
22.
23.
24.
A.
Ohsawa
, K.
Honda
, S.
Shibatomi
, and S.
Ohkawa
, Appl. Phys. Lett.
38
, 787
(1981
).25.
This content is only available via PDF.
© 1983 American Institute of Physics.
1983
American Institute of Physics
You do not currently have access to this content.