Epitaxial Ni and Co silicides have been fabricated using pulsed laser melting and ultrarapid solidification techniques. Interfacial instabilities and cell formation are suppressed during the liquid phase epitaxy by melting mono or disilicide layers. Single crystal NiSi2 and CoSi2 films have been grown on (100) and (111) Si. This method does not require ultrahigh vacuum deposition or reaction techniques.

1.
K. N. Tu and J. W. Mayer, in Thin Films Interdiffusion and Reactions, edited by J. M. Poate, K. N. Tu, and J. W. Mayer (Wiley, New York, 1978), Chap. 10.
2.
R. T.
Tung
,
J. M.
Poate
,
J. C.
Bean
,
J. M.
Gibson
, and
D. C.
Jacobson
,
Thin Solid Films
93
,
77
(
1982
).
3.
R. T.
Tung
,
J. M.
Gibson
, and
J. M.
Poate
,
Phys. Rev. Lett.
50
,
429
(
1983
).
4.
R. T.
Tung
,
J. M.
Gibson
, and
J. M.
Poate
,
Appl. Phys. Lett.
42
,
888
(
1983
).
5.
J. M.
Poate
,
H. J.
Leamy
,
T. T.
Sheng
, and
G. K.
Celler
,
Appl. Phys. Lett.
33
,
918
(
1978
).
6.
W. T. Stacy, C. J. van Gurp, G. E. J. Eggermont, T. Tamminga, and J. R. M. Gijsbers, in Thin Film Interfaces and Interactions, edited by J. E. E. Baglin and J. M. Poate (Electrochemical Society, Princeton, New Jersey, 1980), p. 442.
7.
L. J.
Chen
,
L. S.
Hung
,
J. W.
Mayer
,
J. E. E.
Baglin
,
J. M.
Neri
, and
D. A.
Hammer
,
Appl. Phys. Lett.
40
,
595
(
1982
).
8.
M. G.
Grimaldi
,
P.
Baeri
,
E.
Rimini
, and
G.
Celotti
,
Appl. Phys. Lett.
43
,
244
(
1983
).
9.
P. Baeri and S. U. Campisano, in Laser Annealing of Semiconductors, edited by J. M. Poate and J. W. Mayer (Academic, New York, 1982), Chap. 4.
10.
L. Buene, D. C. Jacobson, S. Nakahara, J. M. Poate, C. W. Draper, and J. K. Hirvonen, in Laser and Electron Beam Solid Interactions and Materials Processing, edited by J. F. Gibbons, L. D. Hess, and T. W. Sigmon (North‐Holland, New York, 1981), p. 583.
This content is only available via PDF.
You do not currently have access to this content.