A new channeled substrate (GaAl)As double‐heterostructure laser with mode control as well as internal current confinement is described. The narrow active region (3–3.5 mm) surrounded by GaAlAs is buried in the etched channel, around which a reverse‐biased heterojunction is formed. The threshold current is as low as 20 mA cw, and highly stable fundamental‐mode lasing is observed.
REFERENCES
1.
2.
3.
K.
Aiki
, M.
Nakashima
, T.
Kuroda
, and J.
Umeda
, Appl. Phys. Lett.
30
, 649
(1977
).4.
Y.
Ide
, T.
Furuse
, I.
Sakuma
, and K.
Nishida
, Appl. Phys. Lett.
36
, 121
(1980
).5.
6.
T.
Moritani
, E.
Oomura
, H.
Higuchi
, H.
Namizaki
, and W.
Susaki
, Electron. Lett.
16
, 566
(1980
).7.
8.
9.
F. R.
Nash
, W. R.
Wagner
, and R. L.
Brown
, J. Appl. Phys.
47
, 3992
(1976
).10.
H. C. Casey, Jr., and M. B. Panish, Heterostructure Lasers (Academic, New York, 1978), p. 71.
11.
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© 1981 American Institute of Physics.
1981
American Institute of Physics
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