The discovery of a new thin‐film electroluminescence system based on impurity‐doped anodic aluminum oxide is reported. Average brightnesses of 30 f L have been observed for devices at room temperature operating at 1 kHz biased at 60 V rms, resulting in 7 mA electronic current and a 10% duty cycle. A new stabilizing layer of manganese oxide permits long‐term operation without catastrophic breakdown. While electrical stability is achieved, loss in electroluminescence efficiency is apparent, possibly due to electromigration of the impurity ions.
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© 1980 American Institute of Physics.
1980
American Institute of Physics
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