The effect of pulsed electron beam annealing (PEBA) on the lattice location and impurity distribution of Ga ions implanted into Al single crystals has been compared with the thermal annealing behavior of this ion/target system. While with thermal annealing only slight improvement of the lattice site occupation was observed after PEBA within experimental accuracy, all implanted impurities occupied perfect lattice sites. In the thermal treatment the Ga atoms partially diffused out of the implanted region; with PEBA, however, the implanted impurity distribution remained unchanged.

1.
Proceedings, Laser Effects in Ion Implanted Semiconductors, Catania, 1978, edited by E. Rimini (University of Catania, Catania, 1979).
2.
A. R. Kirkpatrick, R. G. Little, A. C. Greenwald, and J. A. Minnucci, in Ref. l,p. 232.
3.
T.
Hussain
 and
G.
Linker
,
Nucl. Instrum. Methods
168
,
317
(
1980
).
Google Scholar
Crossref
Search ADS
 
4.
J. Geerk and F. Ratzel, KfK Report No. 2912 (unpublished, 1979).
5.
A. C.
Greenwald
,
A. R.
Kirkpatrick
,
R. G.
Little
, and
J. A.
Minnucci
,
J. Appl. Phys.
50
,
783
(
1979
).
Google Scholar
Crossref
Search ADS
 
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© 1980 American Institute of Physics.
1980
American Institute of Physics
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