Refractory metal silicides WSi2, TaSi2, and MoSi2 have been successfully formed by implanting As+ through the respective metal films deposited on Si. These ion‐beam‐induced silicides can be formed on 〈100〉 single‐crystal Si substrates as well as on polycrystalline Si films. The formation and annealing of these silicides have been studied by He+ backscattering, x‐ray diffraction, and sheet resistivity measurements. Apparently both the ion beam bombardment and some elevation of temperature during implantation are essential for silicide formation. Annealing these ion‐beam‐induced silicides reduces their resistivity and changes their crystallographic structure. The redistribution of implanted As is also observed.
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© 1980 American Institute of Physics.
1980
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