Conversion efficiencies up to 12% at AM1 have been obtained for ion‐implanted laser‐annealed (IILA) GaAs solar cells utilizing a shallow‐homojunction n+/p/p+ structure without a GaAlAs window. The n+ layer was formed by Se+‐ion implantation into the p layer, which was grown epitaxially by chemical vapor deposition on a single‐crystal p+ substrate. The implanted layer was annealed, without encapsulation, by scanning with a cw Nd : YAG laser. Cell metallization was performed by electroplating, and an antireflection coating was formed by anodic oxidation of the n+ layer.

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1979
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