GaAs‐AlxGa1−xAs superlattice structures in which electron mobilities exceed those of otherwise equivalent epitaxial GaAs as well as the Brooks‐Herring predictions near room temperature and at very low temperatures are reported. This new behavior is achieved via a modulation‐doping technique that spatially separates conduction electrons and their parent donor impurity atoms, thereby reducing the influence of ionized and neutral impurity scattering on the electron motion.

Topics
Doping, Electronic transport, Semiconductors, Superlattices, Heterostructures, Epitaxy
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© 1978 American Institute of Physics.
1978
American Institute of Physics
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