Electron‐beam‐absorption measurements were performed to investigate the formation and annealing of radiation damage produced by ion implantation into GaP and GaAs0.6P0.4. The fluence FA required to yield an amorphous layer, the dependence of FA on ion mass and target temperature, and the temperatures necessary for annealing were determined. For 140‐keV Ar into GaAs0.6P0.4, we found FA=1×1014 cm−2 at 273 K and FA→∞ at 580 K. Our results compare well with known data for GaAs and GaP and demonstrate the applicability of the new method of measurement.
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1978
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