Low‐current cw stripe double‐heterostructure (DH) lasers have been realized using a shallow proton‐bombardment technique; unlike usual proton DH lasers they involve a resistive p (GaAl)As confinement layer and a rather highly doped GaAs active region both to reduce spreading current and stripe injected carrier outdiffusion. Threshold currents are on the order of 50 mA for a 12‐μm‐wide by 200‐μm‐long cavity.
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© 1978 American Institute of Physics.
1978
American Institute of Physics
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