The generation of self‐sustained pulsations in degraded (GaAl)As double‐heterostructure diode lasers is explained by invoking microscale absorption centers possessing a large cross section. The microscale degradation centers are found to affect the laser characteristics at a concentration level as low as 1014–1015 cm−3.

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We classify microscale degradation by the size of the degradation centers. Some ionic and crystalline lattice imperfections, as well as small clusters of them are included in the definition of mircoscale degradations. On the other hand, large‐scale degradations are defined to be those characterized by a size comparable to that of the device structure.
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