A new reversible photoelectronic effect is reported for amorphous Si produced by glow discharge of SiH4. Long exposure to light decreases both the photoconductivity and the dark conductivity, the latter by nearly four orders of magnitude. Annealing above 150 °C reverses the process. A model involving optically induced changes in gap states is proposed. The results have strong implications for both the physical nature of the material and for its applications in thin‐film solar cells, as well as the reproducibility of measurements on discharge‐produced Si.
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Research Article| August 26 2008
Reversible conductivity changes in discharge‐produced amorphous Si
Special Collection: APL Classic Papers
Appl. Phys. Lett. 31, 292–294 (1977)
D. L. Staebler, C. R. Wronski; Reversible conductivity changes in discharge‐produced amorphous Si. Appl. Phys. Lett. 15 August 1977; 31 (4): 292–294. https://doi.org/10.1063/1.89674
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