Local thicknesses of a GaAs epitaxial layer grown on a mesa stripe by semiparallel Ga and As4 molecular beams have been found to be proportional to cosφGa, where φGa is a local incident angle of the Ga beam to a local crystal growing surface. Submicron‐thick three‐dimensional GaAs‐Ga1−xAlxAs multilayers have been grown self‐aligningly on corrugated structures with a 8‐μm period. The layer thicknesses and AlAs compositions (x) are also interpreted by the local incident angles of Ga and Al beams, while evidence of atom diffusion is revealed.
REFERENCES
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With mechanical masks, three‐dimensional waveguides have been fabricated by MBE:
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See, e.g., R. W. Berry, P. M. Hall, and M. T. Harris, in Thin Film Technology (Van Nostrand, Princeton, N.J., 1968), p. 160.
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A. Y. Cho and J. R. Arthur, in Progress in Solids State Chemistry, edited by J. McCaldin and G. Somerjai (Pergamon, Oxford, 1975), Vol. 10, p. 157.
8.
Systematical deviations of the data plotted in Fig. 4 are due to facet formation resulting from diffusion as illustrated in Fig. 2.
9.
See, e.g., A. Y. Cho, M. B. Panish, and I. Hayashi, in Proc. 3rd Intern. Symp. on GaAs and Related Compounds (Institute of Physics, London, 1970), p. 18.
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© 1977 American Institute of Physics.
1977
American Institute of Physics
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