By ’’photodoping’’ with silver, chalcogenide glasses become almost insoluble in alkaline solutions. This letter examines the applicability of this effect to silicon microfabrication technology. Suitable processing techniques and exposure characteristics are investigated. It is shown that the (Ag) ‐Se‐Ge glass system can be used as a negative‐type photoresist; fine pattern photoetching of less than 1 μm line width in SiO2 is easily achieved. This inorganic photoresist has some advantages over the conventional polymer‐type photoresists in resolution, etch resistance to acid solutions, and process reproducibility.
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Research Article| August 28 2008
A novel inorganic photoresist utilizing Ag photodoping in Se‐Ge glass films
Appl. Phys. Lett. 29, 677–679 (1976)
Akira Yoshikawa, Osamu Ochi, Haruo Nagai, Yoshihiko Mizushima; A novel inorganic photoresist utilizing Ag photodoping in Se‐Ge glass films. Appl. Phys. Lett. 15 November 1976; 29 (10): 677–679. https://doi.org/10.1063/1.88899
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