By ’’photodoping’’ with silver, chalcogenide glasses become almost insoluble in alkaline solutions. This letter examines the applicability of this effect to silicon microfabrication technology. Suitable processing techniques and exposure characteristics are investigated. It is shown that the (Ag) ‐Se‐Ge glass system can be used as a negative‐type photoresist; fine pattern photoetching of less than 1 μm line width in SiO2 is easily achieved. This inorganic photoresist has some advantages over the conventional polymer‐type photoresists in resolution, etch resistance to acid solutions, and process reproducibility.
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© 1976 American Institute of Physics.
1976
American Institute of Physics
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