By ’’photodoping’’ with silver, chalcogenide glasses become almost insoluble in alkaline solutions. This letter examines the applicability of this effect to silicon microfabrication technology. Suitable processing techniques and exposure characteristics are investigated. It is shown that the (Ag) ‐Se‐Ge glass system can be used as a negative‐type photoresist; fine pattern photoetching of less than 1 μm line width in SiO2 is easily achieved. This inorganic photoresist has some advantages over the conventional polymer‐type photoresists in resolution, etch resistance to acid solutions, and process reproducibility.

Topics
Microfabrication, Etching, Amorphous materials, Light sensitive materials, Metal oxides, Transition metals, Chemical elements, Chemical solutions
1.
H.
Nagai
,
A.
Yoshikawa
,
Y.
Toyoshima
,
O.
Ochi
, and
Y.
Mizushima
,
Appl. Phys. Lett.
28
,
145
(
1976
).
Google Scholar
Crossref
Search ADS
 
2.
T.
Igo
 and
Y.
Toyoshima
,
J. Non‐Cryst. Solids
11
,
304
(
1973
).
Google Scholar
Crossref
Search ADS
 
3.
H. Sakuma, I. Shimizu, H. Kokado, and E. Inoue, Proceedings of the Third Conference on Solid State Devices, Tokyo, 1971 (unpublished);
Suppl. to Oyo Butsuri
41
,
76
(
1972
).
4.
T.
Shirakawa
,
I.
Shimizu
,
H.
Kokado
, and
E.
Inoue
,
Photogr. Sci. Eng.
2
,
139
(
1975
).
Google Scholar
 
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© 1976 American Institute of Physics.
1976
American Institute of Physics
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