An injection laser is described in which a semicircular GaAs active region is completely surrounded by Ga1−xAlxAs by using selective etching and a single liquid‐phase epitaxial growth.The active region dimensions can be made much more symmetric than those obtained with conventional stripe geometry lasers resulting in improved optical characteristics and low room‐temperature threshold currents.

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© 1975 American Institute of Physics.
1975
American Institute of Physics
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