Resonant tunneling of electrons has been observed in double‐barrier structures having a thin GaAs sandwiched between two GaAlas barriers. The resonance manifests itself as peaks or humps in the tunneling current at voltages near the quasistationary states of the potential well. The structures have been fabricated by molecular beam epitaxy which produces extremely smooth films and interfaces.

1.
D. Bohm, Quantum Theory (Prentice‐Hall, Englewood Cliffs, N.J., 1951), p. 283.
2.
L. V.
Iogansen
,
Zh. Eksp. Theor. Fiz.
47
,
270
(
1964
);
[
L. V.
Iogansen
,
Sov. Phys.‐JETP
20
,
180
(
1965
)].
3.
E. O. Kane, in Tunneling Phenomena in Solids, edited by E. Burstein and S. Lundqvist (Plenum, New York, 1969), Chap. 1.
4.
R.
Tsu
and
L.
Esaki
,
Appl. Phys. Lett.
22
,
562
(
1973
).
5.
W. A.
Harrison
,
Phys. Rev.
123
,
85
(
1961
).
6.
J. W.
Gadzuk
,
Phys. Rev. B
1
,
2110
(
1970
).
7.
E. W.
Plummer
and
R. D.
Young
,
Phys. Rev. B
1
,
2088
(
1970
).
8.
L. L.
Chang
,
L.
Esaki
,
W. E.
Howard
,
R.
Ludeke
, and
G.
Schul
,
J. Vac. Sci. Technol.
10
,
655
(
1973
).
9.
D. B.
Dove
,
R.
Ludeke
, and
L. L.
Chang
,
J. Appl. Phys.
44
,
1897
(
1973
).
10.
R.
Ludeke
,
L.
Esaki
, and
L. L.
Chang
,
Appl. Phys. Lett.
24
,
417
(
1974
).
11.
H. C.
Casey
and
M. B.
Panish
,
J. Appl. Phys.
40
,
4910
(
1969
).
12.
F. A.
Padovani
and
R.
Stratton
,
Solid‐State Electron.
9
,
695
(
1966
).
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