Resonant tunneling of electrons has been observed in double‐barrier structures having a thin GaAs sandwiched between two GaAlas barriers. The resonance manifests itself as peaks or humps in the tunneling current at voltages near the quasistationary states of the potential well. The structures have been fabricated by molecular beam epitaxy which produces extremely smooth films and interfaces.
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Research Article| October 09 2003
Resonant tunneling in semiconductor double barriers
Special Collection: APL Classic Papers
L. L. Chang;
L. L. Chang, L. Esaki, R. Tsu; Resonant tunneling in semiconductor double barriers. Appl. Phys. Lett. 15 June 1974; 24 (12): 593–595. https://doi.org/10.1063/1.1655067
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