Double‐heterostructure (GaAl)As–GaAs injection lasers have been made with very narrow active regions in the range 0.11–0.14 μm. In addition to giving narrow angular beam widths down to 16°, they show high peak power handling capacity up to 40‐W/mm junction width at threshold current densities of less than 1500 A/cm2. The results are consistent with the relatively wide near‐field distribution perpendicular to the junction plane, which is deduced from the properties of the heterostructure optical waveguide.
REFERENCES
1.
B. I.
Miller
, E.
Pinkas
, I.
Hayashi
, P. W.
Foy
, and R.
Capik
, Appl. Phys. Lett.
19
, 340
(1971
).2.
H.
Kressel
, H.
Nelson
, and F. Z.
Hawrylo
, J. Appl. Phys.
41
, 2019
(1970
).3.
H.
Kressel
, J. K.
Butler
, F. Z.
Hawrylo
, H. F.
Lockwood
, and M.
Ettenberg
, RCA Rev. (Radio Corp. Am.)
32
, 393
(1971
).4.
5.
C. D. Dobson and F. S. Keeble, International Symposium on GaAs (Institute of Physics and the Physical Society, London, 1966), pp. 68–71.
6.
7.
C. H. Gooch, International Symposium on GaAs (Institute of Physics and the Physical Society, London, 1966), pp. 62–67.
8.
9.
10.
11.
12.
13.
14.
H.
Kressel
, H. F.
Loekwood
, and F. Z.
Hawrylo
, Appl. Phys. Lett.
18
, 43
(1971
).
This content is only available via PDF.
© 1973 American Institute of Physics.
1973
American Institute of Physics
You do not currently have access to this content.
