The small‐signal impedance is derived for a double‐injection structure operating in the low‐injection square‐law regime. Space‐charge effects are found to be essential. Spontaneous voltage oscillations are found to occur above a threshold voltage Vth. The theory gives quantitative agreement with experimental results for Au‐doped Si p‐i‐n diodes. These include the temperature dependence of Vth and the threshold frequency as well as the voltage dependence of the frequency above threshold.
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© 1971 The American Institute of Physics.
1971
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