Surface barrier p‐n junction diodes made from high‐purity n‐GaAs grown by liquid‐phase epitaxy, have been operated as α‐particle and low‐energy γ‐ray detectors over the range 77–373°K. Resolutions observed were 1.2 and 2.95 keV (FWHM) at 130 and 295°K, respectively, for 122‐keV γ rays and 30 keV for 5.47‐MeV α particles. The energy per electron hole pair for α particles is 4.51 eV and the Fano factor for γ rays is ≤0.24 at 130°K.

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