Electron paramagnetic resonance spectra of radiation damage centers in silicon have been observed following implantation with nitrogen and phosphorous ions. Two of these spectra have narrow lines and can be fitted to anisotropic g‐tensors and zero field splitting tensors. One is a new spectrum with approximately [111] axial symmetry and will be called the Si‐B2 spectrum. The other can be identified as the Si‐P3 spectrum which has been known previously to result from neutron irradiation. Both spectra are attributed to defects in the crystal containing broken silicon bonds.

1.
See for example
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some recent results are contained in:
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F. L. Vook, K. L. Brower, and J. A. Borders (private communication). These authors have also observed EPR spectra from radiation damage centers in ion implanted silicon.
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6.
We follow the nomenclature for EPR spectra in silicon described in G. D. Watkins, Radiation Damage in Semiconductors (Dunod, Cie, Paris, 1965), p. 97. Thus Si‐B2 means the second EPR spectrum discovered in silicon at Bell Telephone Laboratories.
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J. W. Corbett, Electron Radiation Damage in Semiconductors and Metals (Academic Press Inc., New York, 1966), p. 81.
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G. D. Watkins and J. W. Corbett, Phys. Rev. 121, 1001.
11.
These concentrations are estimated to be accurate to a factor of 3. The lines of the radiation damage spectra are assumed to be Gaussian. For the Si‐P3 spectra, corrections have been made for the hyperfine lines and the singlet state. Corrections for hyperfine lines could not be made for the Si‐B2 spectrum.
12.
L. C. Feldman (private communication).
13.
L. J.
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and
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171
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856
(
1968
). These authors estimate between 150 and 300 permanent displacements per neutron collision at low temperature. At room temperature the number could be considerably smaller.
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