A method for measuring the electron temperature in the inversion layer of Si metal-oxide-semiconductor structures is presented. This technique utilizes a nano-transistor as a thermometer, placed in close proximity to the inversion layer under investigation, enabling measurements of the electron temperature for values above approximately 10 K. When applied to Joule-heating experiments, this method reveals a notable discrepancy between the measurement results and predictions made by the conventional theory based on the deformation-potential coupling with low-energy acoustic phonons. Specifically, the injected-power dependence of the electron temperature is much weaker than expected. The results strongly suggest that another mechanism causing a significant electron energy loss plays a role.
Skip Nav Destination
,
,
,
Article navigation
24 February 2025
Research Article|
February 24 2025
Electron thermometry for Si MOS inversion layer using proximity nano-transistor and its application to Joule-heating experiment
Hossain Md Nayem
;
Hossain Md Nayem
(Data curation, Formal analysis, Writing – original draft, Writing – review & editing)
1
Graduate School of Science and Technology, Shizuoka University
, 3-5-1 Johoku, Chuo-ku, Hamamatsu, Shizuoka 432-8011, Japan
Search for other works by this author on:
Masahiro Hori
;
Masahiro Hori
(Funding acquisition, Writing – review & editing)
1
Graduate School of Science and Technology, Shizuoka University
, 3-5-1 Johoku, Chuo-ku, Hamamatsu, Shizuoka 432-8011, Japan
2
Research Institute of Electronics, Shizuoka University
, 3-5-1 Johoku, Chuo-ku, Hamamatsu, Shizuoka 432-8011, Japan
Search for other works by this author on:
Katsuhiko Nishiguchi
;
Katsuhiko Nishiguchi
(Resources, Writing – review & editing)
3
NTT Basic Research Laboratories, NTT Corporation
, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
Search for other works by this author on:
Yukinori Ono
Yukinori Ono
a)
(Conceptualization, Funding acquisition, Methodology, Project administration, Resources, Supervision, Writing – original draft, Writing – review & editing)
1
Graduate School of Science and Technology, Shizuoka University
, 3-5-1 Johoku, Chuo-ku, Hamamatsu, Shizuoka 432-8011, Japan
2
Research Institute of Electronics, Shizuoka University
, 3-5-1 Johoku, Chuo-ku, Hamamatsu, Shizuoka 432-8011, Japan
a)Author to whom correspondence should be addressed: [email protected]
Search for other works by this author on:
Hossain Md Nayem
1
Masahiro Hori
1,2
Katsuhiko Nishiguchi
3
Yukinori Ono
1,2,a)
1
Graduate School of Science and Technology, Shizuoka University
, 3-5-1 Johoku, Chuo-ku, Hamamatsu, Shizuoka 432-8011, Japan
2
Research Institute of Electronics, Shizuoka University
, 3-5-1 Johoku, Chuo-ku, Hamamatsu, Shizuoka 432-8011, Japan
3
NTT Basic Research Laboratories, NTT Corporation
, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
a)Author to whom correspondence should be addressed: [email protected]
Appl. Phys. Lett. 126, 083501 (2025)
Article history
Received:
September 20 2024
Accepted:
February 11 2025
Citation
Hossain Md Nayem, Masahiro Hori, Katsuhiko Nishiguchi, Yukinori Ono; Electron thermometry for Si MOS inversion layer using proximity nano-transistor and its application to Joule-heating experiment. Appl. Phys. Lett. 24 February 2025; 126 (8): 083501. https://doi.org/10.1063/5.0239500
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
193
Views
Citing articles via
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Charge localization in optoelectronic and photocatalytic applications: Computational perspective
Francesco Ambrosio, Julia Wiktor
Diamagnetic levitation of water realized with a simple device consisting of ordinary permanent magnets
Tomoya Naito, Tomoaki Suzuki, et al.
Related Content
Joule-heating induced phase transition in 1T-TaS2 near room temperature probed by thermal imaging of power dissipation
Appl. Phys. Lett. (February 2022)
Joule heating induced non-melting phase transition and multi-level conductance in MoTe2 based phase change memory
Appl. Phys. Lett. (November 2022)
Joule heating and the thermal conductivity of a two-dimensional electron gas at cryogenic temperatures studied by modified 3ω method
J. Appl. Phys. (September 2022)
Grain growth of Cu wires during Joule heat welding
J. Vac. Sci. Technol. B (January 2023)
Effect of Joule heating on GMI and magnetic properties of Fe-rich glass-coated microwires
AIP Advances (March 2022)