The rapid evolution of devices based on low-dimensional materials such as MoS2 and single-walled carbon nanotubes (SWNTs) has garnered significant interest for high-performance field-effect transistor (FET) applications. We present a multifunctional MoS2/SWNT device exhibiting non-monotonic current modulation with a rectifying ratio of up to 600. The device also demonstrates remarkable optoelectronic memory performance, including fast erasing/writing times (20.1/1.9 ms), a high erasing/writing ratio (104), multilevel data storage, robust retention (10 000 s), and excellent endurance (1000 cycles). Additionally, we demonstrate ternary inverters combining SWNTs FETs with MoS2/SWNTs heterostructure FETs, highlighting their potential in advanced logic applications.
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Multifunctional complementary field-effect transistors based on MoS2/SWNTs heterostructures
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13 January 2025
Research Article|
January 13 2025
Multifunctional complementary field-effect transistors based on MoS2/SWNTs heterostructures
Special Collection:
Critical Issues on the 2D-material-based field-effect transistors
Wenxiang Wang
;
Wenxiang Wang
(Conceptualization)
1
Department of Mechanics and Engineering Science, State Key Laboratory for Turbulence and Complex Systems, College of Engineering, Peking University
, Beijing 100871, China
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Zheng Wei;
Zheng Wei
(Data curation, Formal analysis)
2
CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, Nanofabrication Laboratory, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology
, Beijing 100190, China
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Yong Jun Li
;
Yong Jun Li
(Writing – review & editing)
2
CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, Nanofabrication Laboratory, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology
, Beijing 100190, China
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Jiawang You;
Jiawang You
(Writing – review & editing)
2
CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, Nanofabrication Laboratory, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology
, Beijing 100190, China
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Xiaohuan Li;
Xiaohuan Li
(Formal analysis, Investigation)
2
CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, Nanofabrication Laboratory, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology
, Beijing 100190, China
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Jinjin He;
Jinjin He
(Methodology)
2
CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, Nanofabrication Laboratory, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology
, Beijing 100190, China
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Han Mao;
Han Mao
(Writing – original draft)
2
CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, Nanofabrication Laboratory, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology
, Beijing 100190, China
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Jiyou Jin;
Jiyou Jin
a)
(Investigation, Methodology, Supervision, Validation, Writing – original draft, Writing – review & editing)
2
CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, Nanofabrication Laboratory, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology
, Beijing 100190, China
a)Authors to whom correspondence should be addressed: [email protected]; [email protected]; and [email protected]
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Lianfeng Sun
;
Lianfeng Sun
a)
(Methodology, Project administration, Validation, Writing – original draft, Writing – review & editing)
2
CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, Nanofabrication Laboratory, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology
, Beijing 100190, China
a)Authors to whom correspondence should be addressed: [email protected]; [email protected]; and [email protected]
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Zhaohe Dai
Zhaohe Dai
a)
(Conceptualization, Investigation, Methodology, Supervision, Validation, Writing – original draft, Writing – review & editing)
1
Department of Mechanics and Engineering Science, State Key Laboratory for Turbulence and Complex Systems, College of Engineering, Peking University
, Beijing 100871, China
a)Authors to whom correspondence should be addressed: [email protected]; [email protected]; and [email protected]
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a)Authors to whom correspondence should be addressed: [email protected]; [email protected]; and [email protected]
Appl. Phys. Lett. 126, 023501 (2025)
Article history
Received:
October 23 2024
Accepted:
December 31 2024
Citation
Wenxiang Wang, Zheng Wei, Yong Jun Li, Jiawang You, Xiaohuan Li, Jinjin He, Han Mao, Jiyou Jin, Lianfeng Sun, Zhaohe Dai; Multifunctional complementary field-effect transistors based on MoS2/SWNTs heterostructures. Appl. Phys. Lett. 13 January 2025; 126 (2): 023501. https://doi.org/10.1063/5.0245016
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