Herein, we employed inductively coupled plasma enhanced chemical vapor deposition using a hexamethyldisiloxane/O2 precursor to deposit SiO2 with electrical double layer capacitance on SiNx forming SiO2/SiNx stacked films as a dielectric layer, achieving high-performance synaptic transistors. The effect of O2 concentration during SiO2 deposition on the transistor performance was investigated. The results of Fourier transform infrared spectroscopy and x-ray photoemission spectroscopy confirm that increasing O2 concentration during deposition boosts the amounts of protons moving between the bridging oxygen in the Si–O–Si network, improving the electrical double layer capacitance of SiO2. Furthermore, SiNx in the stacked structure exhibits a higher relative permittivity than SiO2, resulting in a more concentrated electric field within the SiO2 layer, facilitating proton ionization. SiO2/SiNx stacked film with SiO2 deposited at the oxygen flow rate of 150 sccm exhibited the maximum capacitance of 2.87 μF/cm2 at 4 Hz. The transistor with SiO2 deposited at the oxygen flow rate of 150 sccm achieved the maximum paired pulse facilitation index of 132.9% and the maximum A50/A1 index of 155.4%. This work demonstrates that SiO2 deposited via inductively coupled plasma enhanced chemical vapor deposition using a hexamethyldisiloxane/O2 precursor for application potential in artificial neuromorphic computing.
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13 January 2025
Research Article|
January 13 2025
A synaptic transistor with a stacked layer of SiNx and SiO2 deposited from hexamethyldisiloxane/O2
Chong Peng
;
Chong Peng
(Conceptualization, Data curation, Formal analysis, Investigation, Methodology, Validation, Writing – original draft, Writing – review & editing)
State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University
, Changchun, Jilin 130012, China
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Yiming Liu
;
Yiming Liu
(Writing – original draft, Writing – review & editing)
State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University
, Changchun, Jilin 130012, China
Search for other works by this author on:
Cong Yu
;
Cong Yu
(Writing – original draft, Writing – review & editing)
State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University
, Changchun, Jilin 130012, China
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Yi Zhao
Yi Zhao
a)
(Conceptualization, Funding acquisition, Project administration, Writing – original draft, Writing – review & editing)
State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University
, Changchun, Jilin 130012, China
a)Author to whom correspondence should be addressed: [email protected]
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a)Author to whom correspondence should be addressed: [email protected]
Appl. Phys. Lett. 126, 022901 (2025)
Article history
Received:
August 09 2024
Accepted:
December 27 2024
Citation
Chong Peng, Yiming Liu, Cong Yu, Yi Zhao; A synaptic transistor with a stacked layer of SiNx and SiO2 deposited from hexamethyldisiloxane/O2. Appl. Phys. Lett. 13 January 2025; 126 (2): 022901. https://doi.org/10.1063/5.0232721
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