Mechanically exfoliated β-Ga2O3 flakes preserve bulk material's single crystallinity for easy integration but suffer from interfacial defects that greatly influence device performance. In this paper, we report a quantitative characterization of interfacial states in phrase β-Ga2O3/SiO2 thin-film transistors and then propose their beneficial application in achieving high-response broad-band photodetection. Photo-excited charge collection spectroscopy technique was employed to probe the interfacial states, revealing a substantial density (∼4 × 1012 cm−2 eV−1) of deep-level states ranging from 2.5 to 3.7 eV below the conduction band. Intriguingly, a photoresponsivity as high as 2 × 104 A/W was achieved via utilizing these interfacial states, along with the tunable broad-band response ranging from 335 to 496 nm. This research enhances both the well-industrialized silicon devices and the emerging β-Ga2O3 technologies. Furthermore, it introduces a profound concept: defects, once seen as flaws, can be assets when their characteristics are thoroughly understood.
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Probing interfacial states in β-Ga2O3/SiO2 TFTs for high-response broad-band photodetection
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13 January 2025
Research Article|
January 15 2025
Probing interfacial states in β-Ga2O3/SiO2 TFTs for high-response broad-band photodetection
Yonghui Zhang
;
Yonghui Zhang
a)
(Conceptualization, Data curation, Formal analysis, Funding acquisition, Investigation, Methodology, Visualization, Writing – original draft, Writing – review & editing)
1
Songshan Lake Materials Laboratory
, 523808 Dongguan, Guangdong, People's Republic of China
2
School of Physics and Optoelectronic Engineering, Shandong University of Technology
, 255000 Zibo, Shandong, People's Republic of China
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Rui Zhu
;
Rui Zhu
(Conceptualization, Writing – review & editing)
1
Songshan Lake Materials Laboratory
, 523808 Dongguan, Guangdong, People's Republic of China
3
Institute of Physics, Chinese Academy of Sciences
, 100190 Beijing, People's Republic of China
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Wenxing Huo
;
Wenxing Huo
(Conceptualization, Writing – review & editing)
4
School of Precision Instrument and Opto-electronics Engineering, Tianjin University
, 300072 Tianjin, People's Republic of China
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Huili Liang
;
Huili Liang
(Conceptualization, Writing – review & editing)
1
Songshan Lake Materials Laboratory
, 523808 Dongguan, Guangdong, People's Republic of China
3
Institute of Physics, Chinese Academy of Sciences
, 100190 Beijing, People's Republic of China
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Zengxia Mei
Zengxia Mei
a)
(Conceptualization, Funding acquisition, Supervision, Writing – review & editing)
1
Songshan Lake Materials Laboratory
, 523808 Dongguan, Guangdong, People's Republic of China
3
Institute of Physics, Chinese Academy of Sciences
, 100190 Beijing, People's Republic of China
Search for other works by this author on:
Appl. Phys. Lett. 126, 021605 (2025)
Article history
Received:
September 10 2024
Accepted:
January 03 2025
Citation
Yonghui Zhang, Rui Zhu, Wenxing Huo, Huili Liang, Zengxia Mei; Probing interfacial states in β-Ga2O3/SiO2 TFTs for high-response broad-band photodetection. Appl. Phys. Lett. 13 January 2025; 126 (2): 021605. https://doi.org/10.1063/5.0238245
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