Emerging optoelectronic synaptic devices based on two-dimensional (2D) materials are extremely attractive in the field of artificial intelligence. However, in most reports, these devices either have single functions and high energy consumption. Based on photoinduced ferroelectric polarization reversal (CuInP2S6) and synergistic defect engineering (MoS2), we propose a 2D CuInP2S6–MoS2 two-terminal optoelectronic synapse device, which has a simple structure and a wide spectral photovoltaic response and ultralow power consumption, as low as 0.03 fJ under electric pulse stimulation and 0.5 fJ under light pulse stimulation. Most importantly, complex bionic behaviors, including acquisition, extinction, recovery, and generalization, were mimicked by light and electrical stimulation, respectively. Therefore, this efficient synaptic photovoltaic device can provide a scientific perspective for future bionic synapses and artificial intelligence.
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28 April 2025
Research Article|
April 28 2025
Interplay of ferroelectric polarization and defect engineering in semiconductor heterostructures for photovoltaic synaptic functionality Available to Purchase
Jiake Zhi
;
Jiake Zhi
(Formal analysis, Investigation, Methodology, Writing – original draft)
1
School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University
, Xinxiang, Henan 453007, China
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Jiarong Zhao;
Jiarong Zhao
(Formal analysis, Visualization)
1
School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University
, Xinxiang, Henan 453007, China
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Dingwen Cao;
Dingwen Cao
(Data curation, Methodology)
1
School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University
, Xinxiang, Henan 453007, China
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Shasha Li
;
Shasha Li
(Funding acquisition, Writing – review & editing)
2
School of Electronic Engineering, Chaohu University
, Hefei 238000, China
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Yong Yan
Yong Yan
a)
(Conceptualization, Funding acquisition)
1
School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University
, Xinxiang, Henan 453007, China
a)Author to whom correspondence should be addressed: [email protected]
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Jiake Zhi
1
Jiarong Zhao
1
Dingwen Cao
1
Shasha Li
2
Yong Yan
1,a)
1
School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University
, Xinxiang, Henan 453007, China
2
School of Electronic Engineering, Chaohu University
, Hefei 238000, China
a)Author to whom correspondence should be addressed: [email protected]
Appl. Phys. Lett. 126, 172102 (2025)
Article history
Received:
November 26 2024
Accepted:
April 15 2025
Citation
Jiake Zhi, Jiarong Zhao, Dingwen Cao, Shasha Li, Yong Yan; Interplay of ferroelectric polarization and defect engineering in semiconductor heterostructures for photovoltaic synaptic functionality. Appl. Phys. Lett. 28 April 2025; 126 (17): 172102. https://doi.org/10.1063/5.0250721
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