Microelectromechanical system (MEMS) resonators are versatile and miniaturized devices capable of resonating at specific frequencies for numerous technological applications. Quality (Q) factor and frequency stability are two critical parameters that determine the performance of MEMS resonators. A higher Q-factor typically translates to narrower resonance peaks, leading to improved sensitivity in sensing applications. Frequency stability, on the contrary, refers to the ability of a resonator to maintain its operating frequency over time and under varying environmental conditions. We explore in this study the feasibility of improving the linewidth and the frequency stability of a microcantilever resonator through resonant excitation. We discover that parametric excitation enables mode coupling between its first torsional mode, , and the second flexural mode, and generates two resolved sidebands. The sidebands exhibit narrow linewidths and improved frequency stability over the two original modes, with tunable frequency capacity that can be achieved by adjusting the excitation voltage. This approach offers a versatile method for the design of highly stable MEMS resonators in practical applications.
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Generation of narrow linewidth sidebands by resonant excitation of torsional mode in a microcantilever resonator
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21 April 2025
Research Article|
April 21 2025
Generation of narrow linewidth sidebands by resonant excitation of torsional mode in a microcantilever resonator
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Haoran Wang
;
Haoran Wang
(Conceptualization, Data curation, Formal analysis, Investigation, Writing – original draft, Writing – review & editing)
Institute of Novel Semiconductors, State Key Laboratory of Crystal Materials, Shandong University
, 27 South Shanda Road, Jinan, Shandong 250100, People's Republic of China
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Zhixin Zhao;
Zhixin Zhao
(Methodology)
Institute of Novel Semiconductors, State Key Laboratory of Crystal Materials, Shandong University
, 27 South Shanda Road, Jinan, Shandong 250100, People's Republic of China
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Xiwei Wang
;
Xiwei Wang
(Methodology)
Institute of Novel Semiconductors, State Key Laboratory of Crystal Materials, Shandong University
, 27 South Shanda Road, Jinan, Shandong 250100, People's Republic of China
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Duo Liu
Duo Liu
a)
(Conceptualization, Funding acquisition, Project administration, Resources, Supervision, Writing – review & editing)
Institute of Novel Semiconductors, State Key Laboratory of Crystal Materials, Shandong University
, 27 South Shanda Road, Jinan, Shandong 250100, People's Republic of China
a)Author to whom correspondence should be addressed: [email protected]
Search for other works by this author on:
Haoran Wang
Zhixin Zhao
Xiwei Wang
Duo Liu
a)
Institute of Novel Semiconductors, State Key Laboratory of Crystal Materials, Shandong University
, 27 South Shanda Road, Jinan, Shandong 250100, People's Republic of China
a)Author to whom correspondence should be addressed: [email protected]
Appl. Phys. Lett. 126, 163501 (2025)
Article history
Received:
January 17 2025
Accepted:
April 07 2025
Citation
Haoran Wang, Zhixin Zhao, Xiwei Wang, Duo Liu; Generation of narrow linewidth sidebands by resonant excitation of torsional mode in a microcantilever resonator. Appl. Phys. Lett. 21 April 2025; 126 (16): 163501. https://doi.org/10.1063/5.0258725
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