Two-dimensional gallium nitride (2D-GaN) has great potential in power electronics and optoelectronics. Heat dissipation is a critical issue for these applications of 2D-GaN. Previous studies have shown that higher-order phonon–phonon scattering has extremely strong effects on the lattice thermal conductivity ( ) of 2D-GaN, with the fourth-order interatomic force constants (4th-IFCs) calculated using experienced atomic displacement in the finite difference method. In this work, it is found that the 4th-IFCs of 2D-GaN are quite sensitive to atomic displacement in the finite difference method. The effects of the four-phonon scattering can be severely overestimated with non-convergent 4th-IFCs. The from three-phonon scattering is reduced by 65.6% due to four-phonon scattering. The reflection symmetry allows significantly more four-phonon processes than three-phonon processes. It was previously thought the electron–phonon interactions have significant effects on the of two-dimensional materials. However, the effects of electron–phonon interactions on the of both n-type and p-type 2D-GaN at high charge carrier concentrations can be neglected due to the few phonon–electron scattering channels and the relatively strong four-phonon scattering.
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17 March 2025
Research Article|
March 21 2025
Phonon thermal transport in two-dimensional gallium nitride: Role of higher-order phonon–phonon and phonon–electron scattering Available to Purchase
Jianshi Sun
;
Jianshi Sun
(Formal analysis, Investigation, Writing – original draft)
1
Institute of Micro/Nano Electromechanical System and Integrated Circuit, College of Mechanical Engineering, Donghua University
, Shanghai 201620, China
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Xiangjun Liu
;
Xiangjun Liu
(Project administration, Supervision, Writing – original draft)
1
Institute of Micro/Nano Electromechanical System and Integrated Circuit, College of Mechanical Engineering, Donghua University
, Shanghai 201620, China
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Yucheng Xiong
;
Yucheng Xiong
(Writing – review & editing)
1
Institute of Micro/Nano Electromechanical System and Integrated Circuit, College of Mechanical Engineering, Donghua University
, Shanghai 201620, China
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Yuhang Yao
;
Yuhang Yao
(Writing – review & editing)
1
Institute of Micro/Nano Electromechanical System and Integrated Circuit, College of Mechanical Engineering, Donghua University
, Shanghai 201620, China
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Xiaolong Yang
;
Xiaolong Yang
(Writing – review & editing)
2
College of Physics and Center of Quantum Materials and Devices, Chongqing University
, Chongqing 401331, China
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Cheng Shao
;
Cheng Shao
(Writing – review & editing)
3
Thermal Science Research Center, Shandong Institute of Advanced Technology
, Jinan, Shandong 250103, China
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Renzong Wang
;
Renzong Wang
(Writing – review & editing)
1
Institute of Micro/Nano Electromechanical System and Integrated Circuit, College of Mechanical Engineering, Donghua University
, Shanghai 201620, China
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Shouhang Li
Shouhang Li
a)
(Conceptualization, Funding acquisition, Methodology, Project administration, Supervision, Writing – original draft, Writing – review & editing)
1
Institute of Micro/Nano Electromechanical System and Integrated Circuit, College of Mechanical Engineering, Donghua University
, Shanghai 201620, China
4
Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Saclay
, 10 Boulevard Thomas Gobert, Palaiseau 91120, France
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Jianshi Sun
1
Xiangjun Liu
1
Yucheng Xiong
1
Yuhang Yao
1
Xiaolong Yang
2
Cheng Shao
3
Renzong Wang
1
Shouhang Li
1,4,a)
1
Institute of Micro/Nano Electromechanical System and Integrated Circuit, College of Mechanical Engineering, Donghua University
, Shanghai 201620, China
2
College of Physics and Center of Quantum Materials and Devices, Chongqing University
, Chongqing 401331, China
3
Thermal Science Research Center, Shandong Institute of Advanced Technology
, Jinan, Shandong 250103, China
4
Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Saclay
, 10 Boulevard Thomas Gobert, Palaiseau 91120, France
Appl. Phys. Lett. 126, 112112 (2025)
Article history
Received:
January 03 2025
Accepted:
March 08 2025
Citation
Jianshi Sun, Xiangjun Liu, Yucheng Xiong, Yuhang Yao, Xiaolong Yang, Cheng Shao, Renzong Wang, Shouhang Li; Phonon thermal transport in two-dimensional gallium nitride: Role of higher-order phonon–phonon and phonon–electron scattering. Appl. Phys. Lett. 17 March 2025; 126 (11): 112112. https://doi.org/10.1063/5.0256246
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