Non-collinear spin texture has attracted great attention since it provides an important probe of the interaction between electron and topological spin textures. While it has been widely reported in chiral magnets, oxide heterostructures, and hybrid systems such as ferromagnet/heavy metal and ferromagnet/topological insulators, the study of non-collinear spin texture in two-dimensional (2D) van der Waals (vdW) dilute magnetic semiconductor (DMS) monolayers is relatively lacking, hindering the understanding at the atomically thin scale. Here, we probe the temperature-dependent antisymmetric humps in Hall resistivity by utilizing the proximity coupling of Fe-doped monolayer WSe2 (Fe:WSe2) synthesized using chemical vapor deposition on a Pt Hall bar. Multiple characterization methods were employed to demonstrate that Fe atoms substitutionally replace W atoms, making a 2D vdW DMS at room temperature. Distinct from the intrinsic anomalous Hall effect, we found the transverse Hall resistivity of Fe:WSe2 displaying two additional antisymmetric peak features in the temperature-dependent measurements. These peaks are attributed to the magnetic features at the Fe:WSe2 and Pt interface. Our work shows that a DMS synthesized from 2D vdW transition metal dichalcogenides is promising for realizing magnetic and spintronic applications.
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10 March 2025
Research Article|
March 10 2025
Proximity-induced antisymmetric humps in Hall resistivity in Fe-doped monolayer WSe2 Available to Purchase
Mengqi Fang
;
Mengqi Fang
(Conceptualization, Data curation, Formal analysis, Methodology, Project administration, Validation, Visualization, Writing – original draft, Writing – review & editing)
1
Department of Mechanical Engineering, Stevens Institute of Technology
, Hoboken, New Jersey 07030, USA
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Chunli Tang
;
Chunli Tang
(Data curation, Formal analysis, Investigation, Methodology, Writing – review & editing)
2
Department of Physics, Auburn University
, Auburn, Alabama 36849, USA
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Siwei Chen
;
Siwei Chen
(Conceptualization, Formal analysis, Methodology, Resources, Writing – review & editing)
1
Department of Mechanical Engineering, Stevens Institute of Technology
, Hoboken, New Jersey 07030, USA
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Zitao Tang
;
Zitao Tang
(Data curation)
1
Department of Mechanical Engineering, Stevens Institute of Technology
, Hoboken, New Jersey 07030, USA
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Min-Yeong Choi
;
Min-Yeong Choi
(Data curation)
3
Electron Microscopy Group of Materials Science, Korea Basic Science Institute
, Jeonju, Jeollabuk-do 54907, South Korea
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Jae Hyuck Jang;
Jae Hyuck Jang
(Data curation, Writing – review & editing)
3
Electron Microscopy Group of Materials Science, Korea Basic Science Institute
, Jeonju, Jeollabuk-do 54907, South Korea
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Hee-Suk Chung
;
Hee-Suk Chung
(Data curation, Writing – review & editing)
3
Electron Microscopy Group of Materials Science, Korea Basic Science Institute
, Jeonju, Jeollabuk-do 54907, South Korea
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Maya Narayanan Nair
;
Maya Narayanan Nair
(Data curation, Writing – review & editing)
4
Nanoscience Initiative, Advanced Science Research Center
, New York, New York 10031, USA
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Wencan Jin
;
Wencan Jin
a)
(Methodology, Supervision, Writing – review & editing)
2
Department of Physics, Auburn University
, Auburn, Alabama 36849, USA
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Eui-Hyeok Yang
Eui-Hyeok Yang
a)
(Funding acquisition, Project administration, Supervision, Writing – review & editing)
1
Department of Mechanical Engineering, Stevens Institute of Technology
, Hoboken, New Jersey 07030, USA
5
Center for Quantum Science and Engineering, Stevens Institute of Technology
, Hoboken, New Jersey 07030, USA
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Mengqi Fang
1
Chunli Tang
2
Siwei Chen
1
Zitao Tang
1
Min-Yeong Choi
3
Jae Hyuck Jang
3
Hee-Suk Chung
3
Maya Narayanan Nair
4
Wencan Jin
2,a)
Eui-Hyeok Yang
1,5,a)
1
Department of Mechanical Engineering, Stevens Institute of Technology
, Hoboken, New Jersey 07030, USA
2
Department of Physics, Auburn University
, Auburn, Alabama 36849, USA
3
Electron Microscopy Group of Materials Science, Korea Basic Science Institute
, Jeonju, Jeollabuk-do 54907, South Korea
4
Nanoscience Initiative, Advanced Science Research Center
, New York, New York 10031, USA
5
Center for Quantum Science and Engineering, Stevens Institute of Technology
, Hoboken, New Jersey 07030, USA
Appl. Phys. Lett. 126, 103101 (2025)
Article history
Received:
November 26 2024
Accepted:
February 15 2025
Citation
Mengqi Fang, Chunli Tang, Siwei Chen, Zitao Tang, Min-Yeong Choi, Jae Hyuck Jang, Hee-Suk Chung, Maya Narayanan Nair, Wencan Jin, Eui-Hyeok Yang; Proximity-induced antisymmetric humps in Hall resistivity in Fe-doped monolayer WSe2. Appl. Phys. Lett. 10 March 2025; 126 (10): 103101. https://doi.org/10.1063/5.0250741
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