In this work, the influence of fin-slanted angles (α) on the electrical performance of lateral β-Ga2O3 MOSFETs was investigated through a combination of experiments and Sentaurus TCAD simulations. The fin-slanted devices demonstrated enhancement-mode characteristics with an on/off ratio of around 107. The increment in α resulted in improved drain-to-source current (IDS) and extrinsic transconductance (Gm). The voltage-blocking performance also showed significant enhancement with increasing α due to the mitigation of edge crowding, achieving a 40% increase in the breakdown voltage (VBR) for devices with an α of 15° and gate-to-drain length (LGD) of 10 μm. A detailed simulation analysis of the electric field distribution within the fin at the gate electrode edge identified an optimal α of approximately 25°, which effectively mitigates electric field crowding and has the potential to enhance the DC performance of the MOSFETs. These findings highlight the critical role of fin-slanted angle optimization in advancing the performance of lateral β-Ga2O3 MOSFETs, positioning them as promising candidates for next-generation power electronics.
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Optimization of fin-slanted angles for enhanced electrical performance in lateral β-Ga2O3 MOSFETs
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6 January 2025
Research Article|
January 03 2025
Optimization of fin-slanted angles for enhanced electrical performance in lateral β-Ga2O3 MOSFETs
Haiwen Xu
;
Haiwen Xu
(Data curation, Formal analysis, Methodology, Writing – original draft)
Department of Electrical and Computer Engineering, National University of Singapore
, 117582 Singapore
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Jishen Zhang
;
Jishen Zhang
(Investigation)
Department of Electrical and Computer Engineering, National University of Singapore
, 117582 Singapore
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Xiao Gong
Xiao Gong
a)
(Project administration, Writing – review & editing)
Department of Electrical and Computer Engineering, National University of Singapore
, 117582 Singapore
a)Author to whom correspondence should be addressed: [email protected]
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a)Author to whom correspondence should be addressed: [email protected]
Appl. Phys. Lett. 126, 013505 (2025)
Article history
Received:
September 06 2024
Accepted:
December 19 2024
Citation
Haiwen Xu, Jishen Zhang, Xiao Gong; Optimization of fin-slanted angles for enhanced electrical performance in lateral β-Ga2O3 MOSFETs. Appl. Phys. Lett. 6 January 2025; 126 (1): 013505. https://doi.org/10.1063/5.0237715
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