In this work, brain-like experiential learning/forgetting ability is demonstrated with the help of various synaptic adaptation rules, namely, short-term potentiation/short-term depression, long-term potentiation/long-term depression, spike rate-dependent plasticity, and spike-time-dependent plasticity in a thin-film device. The model device used here is a unidirectional thin film of nanocrystalline Co3O4, grown on a p-Si (100) substrate using the pulsed laser deposition technique to fabricate a metal–insulator–semiconductor type memristor. Along with this, we found an analog bipolar-type switching behavior with excellent resistive switching properties in terms of endurance, retention, and ON–OFF ratio suitable for CMOS-based memory applications. The conduction and resistive switching mechanisms are elucidated using a speculative band diagram formulated from the UV-visible spectroscopy data.
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6 January 2025
Research Article|
January 02 2025
Demonstration of asymmetric Hebbian learning based on analog resistive switching in Ag/Co3O4/p-Si memristor
Indranil Maity
;
Indranil Maity
(Conceptualization, Data curation, Formal analysis, Investigation, Writing – original draft)
Department of Physics, Indian Institute of Technology Patna
, Bihta 801106, India
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Richa Bharti
;
Richa Bharti
(Investigation, Writing – review & editing)
Department of Physics, Indian Institute of Technology Patna
, Bihta 801106, India
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A. K. Mukherjee
;
A. K. Mukherjee
a)
(Conceptualization, Supervision, Writing – review & editing)
Department of Physics, Indian Institute of Technology Patna
, Bihta 801106, India
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Ajay D. Thakur
Ajay D. Thakur
a)
(Conceptualization, Formal analysis, Funding acquisition, Investigation, Methodology, Project administration, Resources, Software, Supervision, Validation, Visualization, Writing – review & editing)
Department of Physics, Indian Institute of Technology Patna
, Bihta 801106, India
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Appl. Phys. Lett. 126, 013504 (2025)
Article history
Received:
August 30 2024
Accepted:
December 16 2024
Citation
Indranil Maity, Richa Bharti, A. K. Mukherjee, Ajay D. Thakur; Demonstration of asymmetric Hebbian learning based on analog resistive switching in Ag/Co3O4/p-Si memristor. Appl. Phys. Lett. 6 January 2025; 126 (1): 013504. https://doi.org/10.1063/5.0235922
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