In this article, we investigate the in situ growth of Al2O3 on -Ga2O3 using metal-organic chemical vapor deposition at a high temperature of 800 °C. The Al2O3 is grown within the same reactor as the -Ga2O3, employing trimethylaluminum and O2 as precursors without breaking the vacuum. We characterize the shallow and deep-level traps through stressed capacitance–voltage (C–V) and photo-assisted C–V methods. The high-temperature deposited dielectric demonstrates an impressive catastrophic breakdown field of approximately 10 MV/cm. Furthermore, we evaluate the reliability and lifetime of the dielectrics using time-dependent dielectric breakdown measurements. By modifying the dielectric deposition process to include a high-temperature (800 °C) thin interfacial layer and a low-temperature (600 °C) bulk layer, we report a 10-year lifetime under a stress field of 3.5 MV/cm along a catastrophic breakdown field of 7.8 MV/cm.
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