The synaptic response of ZnO/HfZrO memristor devices to electrical stimuli was studied. It was found that the frequency of the stimuli affects the rate of current increase, which can be explained by the cluster state of oxygen vacancies at the interface of ZnO/HfZrO. This variation in the synaptic response due to stimulus frequency was consistent with the dynamic adjustment of tolerance thresholds observed in the human brain's response to environmental stimuli. The rate of change in current, representing the sensitivity to stimuli, mirrors the biological nervous system's reaction to environmental changes, such as Ebbinghaus forgetting behavior. Additionally, frequent irregular changes in stimuli lead to a reduced lifespan of the devices, highly resembling the biological lifetime-injure on frequent environmental fluctuations. These findings highlight the memristors' significant similarity to biological nerves in response to stimuli, confirming their tremendous potential in bionic synaptic simulation applications.
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19 August 2024
Research Article|
August 21 2024
Frequency synaptic behavior of ZnO/HfZrO memristor with pulsed stimuli
Jie Lu;
Jie Lu
(Investigation)
Faculty of Electrical Engineering and Computer Science, Ningbo University
, Ningbo 315211, China
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Zeyang Xiang;
Zeyang Xiang
(Investigation)
Faculty of Electrical Engineering and Computer Science, Ningbo University
, Ningbo 315211, China
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Kexiang Wang;
Kexiang Wang
(Investigation)
Faculty of Electrical Engineering and Computer Science, Ningbo University
, Ningbo 315211, China
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Ziyu Wang;
Ziyu Wang
(Investigation)
Faculty of Electrical Engineering and Computer Science, Ningbo University
, Ningbo 315211, China
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Si Shi;
Si Shi
(Investigation)
Faculty of Electrical Engineering and Computer Science, Ningbo University
, Ningbo 315211, China
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Zuming Liu;
Zuming Liu
(Investigation)
Faculty of Electrical Engineering and Computer Science, Ningbo University
, Ningbo 315211, China
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Xiran Chen;
Xiran Chen
(Investigation)
Faculty of Electrical Engineering and Computer Science, Ningbo University
, Ningbo 315211, China
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Xinyu Hu;
Xinyu Hu
(Investigation)
Faculty of Electrical Engineering and Computer Science, Ningbo University
, Ningbo 315211, China
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Ran Jiang
Ran Jiang
a)
(Funding acquisition)
Faculty of Electrical Engineering and Computer Science, Ningbo University
, Ningbo 315211, China
a)Author to whom correspondence should be addressed: jiangran@nbu.edu.cn
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a)Author to whom correspondence should be addressed: jiangran@nbu.edu.cn
Appl. Phys. Lett. 125, 083508 (2024)
Article history
Received:
June 22 2024
Accepted:
August 14 2024
Citation
Jie Lu, Zeyang Xiang, Kexiang Wang, Ziyu Wang, Si Shi, Zuming Liu, Xiran Chen, Xinyu Hu, Ran Jiang; Frequency synaptic behavior of ZnO/HfZrO memristor with pulsed stimuli. Appl. Phys. Lett. 19 August 2024; 125 (8): 083508. https://doi.org/10.1063/5.0224947
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