The basic unit of information in conductive bridge random access memory based on the redox mechanism of metal ions is physically stored in a conductive filament (CF). Therefore, the overall performance of the device is indissolubly related to the properties of such CFs, as unreliable performance often originates from unstable CFs behavior. However, accurately controlling the dissolution of CFs during device operation can be challenging due to their non-uniformity. This paper proposes a type of memristor based on a solid polymer electrolyte with a polyvinylpyrrolidone/polyvinyl alcohol composite layer structure. The properties of the composite layer are employed to regulate the number of CFs and the growth/fracture location, while the damage to the device by Joule heat is prevented. The device exhibits low operating voltage (0.5 V), stable switching conditions (2000 cycles), and a long holdup time (>3 × 104 s).
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