The changes in the crystal structure and ferroelectric properties of (Al0.8Sc0.2)N films sandwiched between Pt and TiN electrodes were investigated by subjecting the films to post-heat-treatment at various temperatures up to 600 °C in both H2 and Ar gases. The remanent polarization underwent slight change, whereas the coercive field strengthened by approximately 9% as a result of the post-heat-treatment up to 600 °C irrespective of the atmosphere and electrode material. This change is much smaller than that reported for ferroelectric (Hf,Zr)O2 films as well as for Pb(Zr,Ti)O3 and SrBi2Ta2O9 films for a wide temperature range from 400 to 600 °C and is almost independent of the Pt and TiN electrodes. The high stability of (Al,Sc)N films with both Pt and TiN electrodes under H2 atmosphere is highly promising to stabilize the properties through the device fabrication process.
Skip Nav Destination
High stability of the ferroelectricity against hydrogen gas in (Al,Sc)N thin films
Article navigation
15 July 2024
Research Article|
July 15 2024
High stability of the ferroelectricity against hydrogen gas in (Al,Sc)N thin films
Nana Sun
;
Nana Sun
(Data curation, Investigation, Writing – original draft)
1
Department of Materials Science and Engineering, Tokyo Institute of Technology
, Yokohama 226-8502, Japan
Search for other works by this author on:
Kazuki Okamoto
;
Kazuki Okamoto
a)
(Investigation, Writing – review & editing)
1
Department of Materials Science and Engineering, Tokyo Institute of Technology
, Yokohama 226-8502, Japan
Search for other works by this author on:
Shinnosuke Yasuoka
;
Shinnosuke Yasuoka
(Data curation, Investigation)
1
Department of Materials Science and Engineering, Tokyo Institute of Technology
, Yokohama 226-8502, Japan
Search for other works by this author on:
Soshun Doko
;
Soshun Doko
(Resources, Writing – review & editing)
2
Canon ANELVA Corporation
, 5-1 Kurigi 2-chome, Asao-ku, Kawasaki-shi, Kanagawa 215-8550, Japan
Search for other works by this author on:
Naoko Matsui
;
Naoko Matsui
(Resources, Writing – review & editing)
2
Canon ANELVA Corporation
, 5-1 Kurigi 2-chome, Asao-ku, Kawasaki-shi, Kanagawa 215-8550, Japan
Search for other works by this author on:
Toshikazu Irisawa
;
Toshikazu Irisawa
(Resources, Writing – review & editing)
2
Canon ANELVA Corporation
, 5-1 Kurigi 2-chome, Asao-ku, Kawasaki-shi, Kanagawa 215-8550, Japan
Search for other works by this author on:
Koji Tsunekawa
;
Koji Tsunekawa
(Resources)
2
Canon ANELVA Corporation
, 5-1 Kurigi 2-chome, Asao-ku, Kawasaki-shi, Kanagawa 215-8550, Japan
Search for other works by this author on:
Takayoshi Katase
;
Takayoshi Katase
(Resources, Writing – review & editing)
3
MDX Research Center for Element Strategy, International Research Frontiers Initiative, Tokyo Institute of Technology
, Yokohama 226-8501, Japan
Search for other works by this author on:
Tomoyuki Koganezawa
;
Tomoyuki Koganezawa
(Resources, Writing – review & editing)
4
Center for Synchrotron Radiation Research, Japan Synchrotron Radiation Research Institute (JASRI)
, 1-1-1 Kouto, Sayo-cho, Sayo-gun 679-5198, Hyogo, Japan
Search for other works by this author on:
Tomotaka Nakatani;
Tomotaka Nakatani
(Resources, Writing – review & editing)
4
Center for Synchrotron Radiation Research, Japan Synchrotron Radiation Research Institute (JASRI)
, 1-1-1 Kouto, Sayo-cho, Sayo-gun 679-5198, Hyogo, Japan
Search for other works by this author on:
Rosantha Kumara
;
Rosantha Kumara
(Resources, Writing – review & editing)
4
Center for Synchrotron Radiation Research, Japan Synchrotron Radiation Research Institute (JASRI)
, 1-1-1 Kouto, Sayo-cho, Sayo-gun 679-5198, Hyogo, Japan
Search for other works by this author on:
Osami Sakata
;
Osami Sakata
(Resources, Writing – review & editing)
4
Center for Synchrotron Radiation Research, Japan Synchrotron Radiation Research Institute (JASRI)
, 1-1-1 Kouto, Sayo-cho, Sayo-gun 679-5198, Hyogo, Japan
Search for other works by this author on:
Hiroshi Funakubo
Hiroshi Funakubo
a)
(Conceptualization, Writing – review & editing)
1
Department of Materials Science and Engineering, Tokyo Institute of Technology
, Yokohama 226-8502, Japan
3
MDX Research Center for Element Strategy, International Research Frontiers Initiative, Tokyo Institute of Technology
, Yokohama 226-8501, Japan
Search for other works by this author on:
Appl. Phys. Lett. 125, 032904 (2024)
Article history
Received:
February 02 2024
Accepted:
June 05 2024
Citation
Nana Sun, Kazuki Okamoto, Shinnosuke Yasuoka, Soshun Doko, Naoko Matsui, Toshikazu Irisawa, Koji Tsunekawa, Takayoshi Katase, Tomoyuki Koganezawa, Tomotaka Nakatani, Rosantha Kumara, Osami Sakata, Hiroshi Funakubo; High stability of the ferroelectricity against hydrogen gas in (Al,Sc)N thin films. Appl. Phys. Lett. 15 July 2024; 125 (3): 032904. https://doi.org/10.1063/5.0202063
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
912
Views
Citing articles via
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Sputter epitaxy of ScAlN films on GaN high electron mobility transistor structures
Tomoya Okuda, Shunsuke Ota, et al.
Special issue APL organic and hybrid photodetectors
Karl Leo, Canek Fuentes-Hernandez, et al.
Related Content
Scalable ferroelectricity of 20 nm-thick (Al0.8Sc0.2)N thin films sandwiched between TiN electrodes
J. Appl. Phys. (December 2023)
Invariant polarization switching kinetics in an (Al0.8Sc0.2)N film with frequency and temperature
Appl. Phys. Lett. (November 2023)
Impact of total ionizing dose irradiation on Pt/SrBi2Ta2O9/HfTaO/Si memory capacitors
Appl. Phys. Lett. (January 2015)
Electrical characterization of Pt/SrBi2Ta2O9/Pt capacitors fabricated by the pulsed laser ablated deposition technique
J. Vac. Sci. Technol. A (May 1996)
Metal (Pt)/ferroelectric (SrBi2Ta2O9)/insulator (La2O3)/semiconductor (Si), MFIS structures for nonvolatile memory applications
Appl. Phys. Lett. (August 2021)