We investigated the photoluminescence (PL) from single-layer MoS2 on VO2 platelets grown on SiO2, where the insulating and metallic phases can coexist above a bulk transition temperature of 340 K, due to the inhomogeneous strain. We found that the intensity of PL from MoS2 on metallic VO2 is higher than that on the insulating counterpart, resulting in spatially varying PL even at the sub-micrometer scale. In contrast to the intensity, the PL peak energies were observed to be nearly identical on insulating and metallic VO2, indicating that the influences of charge transfer, strain, and dielectric screening on MoS2 are comparable, regardless of the phase state. Thus, the observed difference in PL intensity is due to the difference in refractive indices of insulating and metallic VO2, leading to the phase-dependent Fabry–Pérot interference effect. We performed numerical simulations for the emission from MoS2 supported on the VO2-based Fabry–Pérot interferometer. The calculated emission intensity ratio on insulating and metallic VO2 well reproduces the experimental observations. These results suggest a strategy for controlling PL from two-dimensional semiconductors in a spatial and reconfigurable manner.
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25 November 2024
Research Article|
November 26 2024
Spatial and reconfigurable control of photoluminescence from single-layer MoS2 using a strained VO2-based Fabry–Pérot cavity
Koyo Nakayama
;
Koyo Nakayama
(Formal analysis, Investigation, Resources, Software)
1
Department of Pure and Applied Physics, Kansai University
, Suita 564-8680, Japan
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Shota Toida
;
Shota Toida
(Resources)
2
Department of Physics, Tokyo Metropolitan University
, Tokyo 192-0397, Japan
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Takahiko Endo
;
Takahiko Endo
(Resources)
2
Department of Physics, Tokyo Metropolitan University
, Tokyo 192-0397, Japan
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Mitsuru Inada
;
Mitsuru Inada
(Resources)
1
Department of Pure and Applied Physics, Kansai University
, Suita 564-8680, Japan
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Shingo Sato
;
Shingo Sato
(Resources)
3
Department of Electric, Electronic, and Information Engineering, Kansai University
, Suita 564-8680, Japan
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Hiroshi Tani
;
Hiroshi Tani
(Resources)
4
Department of Mechanical Engineering, Kansai University
, Suita 564-8680, Japan
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Kenji Watanabe
;
Kenji Watanabe
(Resources)
5
Research Center for Electronic and Optical Materials, National Institute for Materials Science
, Tsukuba 305-0044, Japan
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Takashi Taniguchi
;
Takashi Taniguchi
(Resources)
6
Research Center for Materials Nanoarchitectonics, National Institute for Materials Science
, Tsukuba 305-0044, Japan
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Keiji Ueno
;
Keiji Ueno
(Resources)
7
Department of Chemistry, Saitama University
, Saitama 338-8570, Japan
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Yasumitsu Miyata
;
Yasumitsu Miyata
(Funding acquisition, Resources, Writing – review & editing)
2
Department of Physics, Tokyo Metropolitan University
, Tokyo 192-0397, Japan
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Kazunari Matsuda;
Kazunari Matsuda
(Funding acquisition, Resources, Writing – review & editing)
8
Institute of Advanced Energy, Kyoto University
, Uji, Kyoto 611-011, Japan
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Mahito Yamamoto
Mahito Yamamoto
a)
(Conceptualization, Formal analysis, Funding acquisition, Investigation, Software, Visualization, Writing – original draft)
1
Department of Pure and Applied Physics, Kansai University
, Suita 564-8680, Japan
a)Author to whom correspondence should be addressed: [email protected]
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a)Author to whom correspondence should be addressed: [email protected]
Appl. Phys. Lett. 125, 223106 (2024)
Article history
Received:
August 31 2024
Accepted:
October 31 2024
Citation
Koyo Nakayama, Shota Toida, Takahiko Endo, Mitsuru Inada, Shingo Sato, Hiroshi Tani, Kenji Watanabe, Takashi Taniguchi, Keiji Ueno, Yasumitsu Miyata, Kazunari Matsuda, Mahito Yamamoto; Spatial and reconfigurable control of photoluminescence from single-layer MoS2 using a strained VO2-based Fabry–Pérot cavity. Appl. Phys. Lett. 25 November 2024; 125 (22): 223106. https://doi.org/10.1063/5.0236517
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