Traditional distributed feedback (DFB) or distributed Bragg reflector (DBR) lasers typically have commonly employed buried gratings as frequency-selective optical feedback mechanisms. However, the fabrication of such gratings often requires regrowth processes, which introduce significant technical challenges, particularly for material systems such as GaAs and GaSb. While metal gratings have been implemented in GaSb-based lasers, they incur additional absorption losses, thereby constraining the device's efficiency and achievable output power. Herein, we introduce a laterally coupled dielectric Bragg grating structure, which enables highly controllable, deterministic, and stable coupling between the grating and the optical mode. Our device demonstrates a continuous-wave output power of 47.02 mW at room temperature, exhibiting stable single-mode operation from 300 to 1000 mA and a maximum side mode suppression ratio of 46.7 dB. These results underscore the innovative lateral coupled dielectric grating as a feasible and technologically superior approach for fabricating DFB and DBR lasers, which hold universal applicability across different material platforms and wavelength bands.
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11 November 2024
Research Article|
November 11 2024
High power GaSb-based distributed feedback laser with laterally coupled dielectric gratings at 1.95 µm
Zhengqing Ding
;
Zhengqing Ding
(Conceptualization, Data curation, Formal analysis, Investigation, Methodology, Software, Validation, Writing – original draft, Writing – review & editing)
1
State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University
, Guangzhou 510275, China
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Juntian Cao;
Juntian Cao
(Data curation, Formal analysis, Investigation, Writing – review & editing)
2
Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences
, Beijing, China
3
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences
, Beijing, China
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Kun Zhan;
Kun Zhan
(Methodology, Writing – review & editing)
1
State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University
, Guangzhou 510275, China
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Yihang Chen;
Yihang Chen
(Validation, Writing – review & editing)
2
Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences
, Beijing, China
3
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences
, Beijing, China
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Lidan Zhou;
Lidan Zhou
(Methodology, Writing – review & editing)
1
State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University
, Guangzhou 510275, China
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Weiyuan Wang
;
Weiyuan Wang
(Validation, Writing – review & editing)
4
Jincheng Research Institute of Opto-Mechatronics Industry
, Shanxi, China
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Hao Tan
;
Hao Tan
(Validation, Writing – review & editing)
5
International Quantum Academy
, Shenzhen, China
6
Hefei National Laboratory
, Hefei, China
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Chengao Yang
;
Chengao Yang
a)
(Conceptualization, Funding acquisition, Investigation, Methodology, Writing – review & editing)
2
Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences
, Beijing, China
3
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences
, Beijing, China
a)Authors to whom correspondence should be addressed: [email protected]; [email protected]; and [email protected]
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Ying Yu
;
Ying Yu
a)
(Conceptualization, Funding acquisition, Investigation, Methodology, Project administration, Resources, Supervision, Validation, Writing – review & editing)
1
State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University
, Guangzhou 510275, China
a)Authors to whom correspondence should be addressed: [email protected]; [email protected]; and [email protected]
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Zhichuan Niu;
Zhichuan Niu
a)
(Conceptualization, Funding acquisition, Validation, Writing – review & editing)
2
Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences
, Beijing, China
3
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences
, Beijing, China
a)Authors to whom correspondence should be addressed: [email protected]; [email protected]; and [email protected]
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Siyuan Yu
Siyuan Yu
(Conceptualization, Funding acquisition, Methodology, Validation, Writing – review & editing)
1
State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University
, Guangzhou 510275, China
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a)Authors to whom correspondence should be addressed: [email protected]; [email protected]; and [email protected]
Appl. Phys. Lett. 125, 202101 (2024)
Article history
Received:
August 12 2024
Accepted:
October 30 2024
Citation
Zhengqing Ding, Juntian Cao, Kun Zhan, Yihang Chen, Lidan Zhou, Weiyuan Wang, Hao Tan, Chengao Yang, Ying Yu, Zhichuan Niu, Siyuan Yu; High power GaSb-based distributed feedback laser with laterally coupled dielectric gratings at 1.95 µm. Appl. Phys. Lett. 11 November 2024; 125 (20): 202101. https://doi.org/10.1063/5.0233108
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