The electrical switching of antiferromagnet (AFM) is very important for the development of ultrafast magnetic random-access memory (MRAM). This task becomes more difficult in antiferromagnetic oxide NiO, which has complex anisotropy. We show that by utilizing two spin–orbit torques (SOTs) from orthogonal currents, one can deterministically switch the magnetic moments of NiO in two electrical distinguishable states that can be read out using the spin Hall magnetoresistance. This deterministic switching relies on the symmetry of SOT on different sublattices, where the sign reversal of magnetic moments leads to constructive torques in the beginning and balanced torques in the end. In addition, we show that the easy-plane anisotropy plays a key role in the switching, which has been ignored in some previous works. The uniform magnetic dynamics in this work provides a clear physical picture in understanding the SOT switching of NiO. Furthermore, the electrical writing and reading function in our device advances the development of AFM-MRAM.
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28 October 2024
Research Article|
October 30 2024
Orthogonal spin–orbit torque-induced deterministic switching in NiO
Yixiao Qiao
;
Yixiao Qiao
(Conceptualization, Data curation, Formal analysis, Investigation, Methodology, Project administration, Resources, Software, Validation, Visualization, Writing – original draft, Writing – review & editing)
1
School of Information Science and Technology, ShanghaiTech University
, Shanghai 201210, China
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Zhengde Xu
;
Zhengde Xu
(Conceptualization, Data curation, Formal analysis, Investigation, Methodology, Project administration, Resources, Software, Validation, Visualization, Writing – original draft, Writing – review & editing)
1
School of Information Science and Technology, ShanghaiTech University
, Shanghai 201210, China
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Zhuo Xu
;
Zhuo Xu
(Investigation, Project administration, Resources, Software)
1
School of Information Science and Technology, ShanghaiTech University
, Shanghai 201210, China
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Yumeng Yang
;
Yumeng Yang
(Formal analysis, Investigation)
1
School of Information Science and Technology, ShanghaiTech University
, Shanghai 201210, China
2
Shanghai Engineering Research Center of Energy Efficient and Custom AI IC
, Shanghai 201210, China
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Zhifeng Zhu
Zhifeng Zhu
a)
(Funding acquisition, Investigation, Methodology, Project administration, Resources, Software, Supervision, Validation, Visualization, Writing – original draft, Writing – review & editing)
1
School of Information Science and Technology, ShanghaiTech University
, Shanghai 201210, China
2
Shanghai Engineering Research Center of Energy Efficient and Custom AI IC
, Shanghai 201210, China
a)Author to whom correspondence should be addressed: zhuzhf@shanghaitech.edu.cn
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a)Author to whom correspondence should be addressed: zhuzhf@shanghaitech.edu.cn
Appl. Phys. Lett. 125, 182403 (2024)
Article history
Received:
June 17 2024
Accepted:
October 17 2024
Citation
Yixiao Qiao, Zhengde Xu, Zhuo Xu, Yumeng Yang, Zhifeng Zhu; Orthogonal spin–orbit torque-induced deterministic switching in NiO. Appl. Phys. Lett. 28 October 2024; 125 (18): 182403. https://doi.org/10.1063/5.0223716
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