SrAl2O4:Eu2+, Dy3+ as an excellent persistent phosphor has been widely applied in many fields. However, the high temperature induced thermal failure has always been a bottleneck problem restricting its long-term development. In this study, a simple pre-annealing method was utilized to improve the thermal damage resistance ability of SrAl2O4:Eu2+, Dy3+ persistent phosphors. After annealing at 900 °C, the afterglow duration time of the phosphor pre-annealed at 400 °C reached 233 min, which was twice longer than that of the phosphor without pre-annealing. An extrinsic vacancy defect migration theory at an elevated temperature was proposed to explain the interesting phenomenon. This study introduced a path to enhance the thermal stability of SrAl2O4:Eu2+, Dy3+ persistent phosphors and provided a thought to design persistent luminescence materials with desired thermal stability.
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30 September 2024
Research Article|
October 01 2024
Improvement of thermal damage resistance of SrAl2O4:Eu2+, Dy3+ persistent phosphor by a low temperature pre-annealing and its mechanism
Dongshun Chen
;
Dongshun Chen
(Conceptualization, Data curation, Investigation, Writing – original draft)
1
Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronics Engineering, Jiangsu Normal University
, Xuzhou 221116, People's Republic of China
2
Jiangsu Xiyi Advanced Materials Research Institute of Industrial Technology
, Xuzhou 221400, People's Republic of China
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Tianyuan Zhou;
Tianyuan Zhou
(Writing – review & editing)
1
Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronics Engineering, Jiangsu Normal University
, Xuzhou 221116, People's Republic of China
2
Jiangsu Xiyi Advanced Materials Research Institute of Industrial Technology
, Xuzhou 221400, People's Republic of China
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Le Zhang
;
Le Zhang
a)
(Conceptualization, Funding acquisition, Project administration, Resources, Supervision, Writing – review & editing)
1
Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronics Engineering, Jiangsu Normal University
, Xuzhou 221116, People's Republic of China
2
Jiangsu Xiyi Advanced Materials Research Institute of Industrial Technology
, Xuzhou 221400, People's Republic of China
3
State Key Laboratory of Crystal Materials, Shandong University
, Jinan 250100, People's Republic of China
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Wen Tian;
Wen Tian
(Data curation)
1
Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronics Engineering, Jiangsu Normal University
, Xuzhou 221116, People's Republic of China
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Xinyuan Zhang;
Xinyuan Zhang
(Data curation)
2
Jiangsu Xiyi Advanced Materials Research Institute of Industrial Technology
, Xuzhou 221400, People's Republic of China
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Chaofan Shi;
Chaofan Shi
(Data curation)
2
Jiangsu Xiyi Advanced Materials Research Institute of Industrial Technology
, Xuzhou 221400, People's Republic of China
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Hongsen Wang;
Hongsen Wang
(Data curation)
1
Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronics Engineering, Jiangsu Normal University
, Xuzhou 221116, People's Republic of China
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Zihan Zhou;
Zihan Zhou
(Data curation)
1
Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronics Engineering, Jiangsu Normal University
, Xuzhou 221116, People's Republic of China
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Baojin Huang;
Baojin Huang
(Formal analysis)
4
Jiangnan Shipyard (Group) Co. Ltd
, Shanghai 201913, People's Republic of China
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Wieslaw Strek
;
Wieslaw Strek
(Conceptualization)
5
Institute of Low Temperature and Structure Research, Polish Academy of Sciences
, Wroclaw 50-422, Poland
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Hao Chen
Hao Chen
a)
(Conceptualization)
1
Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronics Engineering, Jiangsu Normal University
, Xuzhou 221116, People's Republic of China
2
Jiangsu Xiyi Advanced Materials Research Institute of Industrial Technology
, Xuzhou 221400, People's Republic of China
6
School of Physical Science and Technology, Suzhou University of Science and Technology
, Suzhou 215009, People's Republic of China
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Dongshun Chen
1,2
Tianyuan Zhou
1,2
Le Zhang
1,2,3,a)
Wen Tian
1
Xinyuan Zhang
2
Chaofan Shi
2
Hongsen Wang
1
Zihan Zhou
1
Baojin Huang
4
Wieslaw Strek
5
Hao Chen
1,2,6,a)
1
Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronics Engineering, Jiangsu Normal University
, Xuzhou 221116, People's Republic of China
2
Jiangsu Xiyi Advanced Materials Research Institute of Industrial Technology
, Xuzhou 221400, People's Republic of China
3
State Key Laboratory of Crystal Materials, Shandong University
, Jinan 250100, People's Republic of China
4
Jiangnan Shipyard (Group) Co. Ltd
, Shanghai 201913, People's Republic of China
5
Institute of Low Temperature and Structure Research, Polish Academy of Sciences
, Wroclaw 50-422, Poland
6
School of Physical Science and Technology, Suzhou University of Science and Technology
, Suzhou 215009, People's Republic of China
Appl. Phys. Lett. 125, 142205 (2024)
Article history
Received:
August 16 2024
Accepted:
September 20 2024
Citation
Dongshun Chen, Tianyuan Zhou, Le Zhang, Wen Tian, Xinyuan Zhang, Chaofan Shi, Hongsen Wang, Zihan Zhou, Baojin Huang, Wieslaw Strek, Hao Chen; Improvement of thermal damage resistance of SrAl2O4:Eu2+, Dy3+ persistent phosphor by a low temperature pre-annealing and its mechanism. Appl. Phys. Lett. 30 September 2024; 125 (14): 142205. https://doi.org/10.1063/5.0233664
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