We report on the growth of AlPN on GaN/sapphire templates by metalorganic vapor phase epitaxy using tertiarybutylphosphine (tBP) and NH3 as group-V precursors. P is easy to incorporate into the group-III lattice site, forming PAl anti-site defects and shrinking lattice constants that are even beyond AlN since Al is larger than P. We found that higher temperatures favor P incorporation on the N-sublattice, forming AlPyN1−y, while growth temperatures below 1000 °C result in dominant P incorporation on the Al-sublattice, forming PAl anisites. Similarly, larger NH3 flows stabilize GaN, leading to flat interfaces, but favor the formation of PAl. Furthermore, the P incorporation into AlPyN1−y is non-linear. At very low tBP flows, it initially increases to reach a maximum. Further increasing the tBP flow increases mostly the incorporation of P on the Al-sublattice, and the c-lattice constant decreases again. This leaves a small window of low V/III ratios below 5 and low P/N ratios of 1% or smaller, leading up to ∼4% P incorporation at typical growth temperatures of GaN. However, at such low V/III ratios, GaN is not stable even with N2 carrier gas and requires optimized switching sequences to minimize its decomposition and preserve flat interfaces. Eventually, a 10 nm coherent layer of AlP0.01N0.99 could be reproducibly grown on top of GaN channels with a smooth surface, an abrupt AlPN/GaN interface, and a two-dimensional electron gas with an electron mobility of ∼675 cm2/V s and a sheet carrier density of 1.5 × 1013 cm−2 at room temperature.
REFERENCES
1.
A. S. A.
Fletcher
and
D.
Nirmal
, “
A survey of gallium nitride HEMT for RF and high power applications
,” Superlattices Microstruct.
109
, 519
–537
(2017
).2.
M.
Asif Khan
,
A.
Bhattarai
,
J. N.
Kuznia
, and
D. T.
Olson
, “
High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction
,” Appl. Phys. Lett.
63
(9
), 1214
–1215
(1993
).3.
M.
Asif Khan
,
J. W.
Yang
,
W.
Knap
,
E.
Frayssinet
,
X.
Hu
,
G.
Simin
,
P.
Prystawko
,
M.
Leszczynski
,
I.
Grzegory
,
S.
Porowski
,
R.
Gaska
,
M. S.
Shur
,
B.
Beaumont
,
M.
Teisseire
, and
G.
Neu
, “
GaN–AlGaN heterostructure field-effect transistors over bulk GaN substrates
,” Appl. Phys. Lett.
76
(25
), 3807
–3809
(2000
).4.
V.
Kumar
,
W.
Lu
,
R.
Schwindt
,
A.
Kuliev
,
G.
Simin
,
J.
Yang
,
M.
Asif Khan
, and
I.
Adesida
, “
AlGaN/GaN HEMTs on SiC with fT of over 120 GHz
,” IEEE Electron Device Lett.
23
(8
), 455
–457
(2002
).5.
Y.
Cao
and
D.
Jena
, “
High-mobility window for two-dimensional electron gases at ultrathin AlN∕GaN heterojunctions
,” Appl. Phys. Lett.
90
(18
), 182112
(2007
).6.
S. R.
Lee
,
D. D.
Koleske
,
K. C.
Cross
,
J. A.
Floro
,
K. E.
Waldrip
,
A. T.
Wise
, and
S.
Mahajan
, “
In situ measurements of the critical thickness for strain relaxation in AlGaN∕GaN heterostructures
,” Appl. Phys. Lett.
85
(25
), 6164
–6166
(2004
).7.
Z.
Sitar
,
M. J.
Paisley
,
B.
Yan
,
J.
Ruan
,
W. J.
Choyke
, and
R. F.
Davis
, “
Growth of AlN/GaN layered structures by gas source molecular‐beam epitaxy
,” J. Vac. Sci. Technol. B
8
(2
), 316
–322
(1990
).8.
N.
Grandjean
and
J.
Massies
, “
GaN and AlxGa1−xN molecular beam epitaxy monitored by reflection high-energy electron diffraction
,” Appl. Phys. Lett.
71
(13
), 1816
–1818
(1997
).9.
J.
Kuzmik
, “
Power electronics on InAlN/(In)GaN: Prospect for a record performance
,” IEEE Electron Device Lett.
22
(11
), 510
–512
(2001
).10.
D. S.
Lee
,
X.
Gao
,
S.
Guo
,
D.
Kopp
,
P.
Fay
, and
T.
Palacios
, “
300-GHz InAlN/GaN HEMTs with InGaN back barrier
,” IEEE Electron Device Lett.
32
(11
), 1525
–1527
(2011
).11.
S.
Choi
,
H.
Jin Kim
,
Z.
Lochner
,
J.
Kim
,
R. D.
Dupuis
,
A. M.
Fischer
,
R.
Juday
,
Y.
Huang
,
T.
Li
,
J. Y.
Huang
,
F. A.
Ponce
, and
J.-H.
Ryou
, “
Origins of unintentional incorporation of gallium in AlInN layers during epitaxial growth, part I: Growth of AlInN on AlN and effects of prior coating
,” J. Cryst. Growth
388
, 137
–142
(2014
).12.
M.
Akiyama
,
T.
Kamohara
,
K.
Kano
,
A.
Teshigahara
,
Y.
Takeuchi
, and
N.
Kawahara
, “
Enhancement of piezoelectric response in scandium aluminum nitride alloy thin films prepared by dual reactive cosputtering
,” Adv. Mater.
21
(5
), 593
–596
(2009
).13.
S.
Leone
,
J.
Ligl
,
C.
Manz
,
L.
Kirste
,
T.
Fuchs
,
H.
Menner
,
M.
Prescher
,
J.
Wiegert
,
A.
Žukauskaitė
,
R.
Quay
, and
O.
Ambacher
, “
Metal-organic chemical vapor deposition of aluminum scandium nitride
,” Phys. Status Solidi RRL
14
(1
), 1900535
(2020
).14.
D.
Barisic
,
D.
Diether
,
C.
Maichle-Mössmer
, and
R.
Anwander
, “
Trimethylscandium
,” J. Am. Chem. Soc.
141
(35
), 13931
–13940
(2019
).15.
I.
Streicher
,
S.
Leone
,
C.
Manz
,
L.
Kirste
,
M.
Prescher
,
P.
Waltereit
,
M.
Mikulla
,
R.
Quay
, and
O.
Ambacher
, “
Effect of AlN and AlGaN interlayers on AlScN/GaN heterostructures grown by metal–organic chemical vapor deposition
,” Cryst. Growth Des.
23
(2
), 782
–791
(2023
).16.
I.
Streicher
,
S.
Leone
,
L.
Kirste
,
C.
Manz
,
P.
Straňák
,
M.
Prescher
,
P.
Waltereit
,
M.
Mikulla
,
R.
Quay
, and
O.
Ambacher
, “
Enhanced AlScN/GaN heterostructures grown with a novel precursor by metal–organic chemical vapor deposition
,” Phys. Status Solidi RRL
17
(2
), 2200387
(2023
).17.
M.
Pristovsek
,
D.
van Dinh
,
T.
Liu
, and
N.
Ikarashi
, “
Wurtzite AlPyN1−y: A new III-V compound semiconductor lattice-matched to GaN (0001)
,” Appl. Phys. Express
13
(11
), 111001
(2020
).18.
D.
Borovac
,
C.-K.
Tan
, and
N.
Tansu
, “
First-principle electronic properties of dilute-P AlNP deep ultraviolet semiconductor
,” AIP Adv.
8
(8
), 085119
(2018
).19.
M.
Pristovsek
, “
Wurtzite Al1−xGaxPyN1−y barrier layer growth for high electron mobility transistors
,” J. Cryst. Growth
600
, 126908
(2022
).20.
Y.
Yao
,
Y.
Zhang
,
J.
Zhu
,
K.
Dang
,
C.
Su
,
J.
Ma
,
K.
Chen
,
B.
Wang
,
W.
Liu
,
S.
Xu
,
S.
Zhao
,
J.
Zhang
, and
Y.
Hao
, “
Study of the AlPN/GaN high electron mobility transistors with improved transconductance linearity
,” Appl. Phys. Lett.
123
(20
), 202104
(2023
).21.
Y.
Yao
,
Y.
Zhang
,
J.
Zhang
,
Y.
Li
,
J.
Ma
,
K.
Chen
,
J.
Zhu
,
S.
Xu
,
J.
Bai
,
B.
Cheng
,
S.
Zhao
, and
Y.
Hao
, “
Research on the mechanism and influence of P incorporation in N-rich nitride AlPN and growth of high quality AlPN/GaN HEMT
,” Vacuum
216
, 112441
(2023
).22.
O. V.
Penkov
,
I. A.
Kopylets
,
M.
Khadem
, and
T.
Qin
, “
X-Ray Calc: A software for the simulation of X-ray reflectivity
,” SoftwareX
12
, 100528
(2020
).23.
T.
Takayama
,
M.
Yuri
,
K.
Itoh
, and
J. S.
Harris
, Jr., “
Theoretical predictions of unstable two-phase regions in wurtzite group-III-nitride-based ternary and quaternary material systems using modified valence force field model
,” J. Appl. Phys
90
(5
), 2358
–2369
(2001
).24.
A. M.
Miller
,
M.
Lemon
,
M. A.
Choffel
,
S. R.
Rich
,
F.
Harvel
, and
D. C.
Johnson
, “
Extracting information from X-ray diffraction patterns containing Laue oscillations
,” Z. Naturforsch., B
77
(4–5
), 313
–322
(2022
).25.
M.
Miyoshi
,
M.
Yamanaka
,
T.
Egawa
, and
T.
Takeuchi
, “
Epitaxial growth and characterization of approximately 300-nm-thick AlInN films nearly lattice-matched to c-plane GaN grown on sapphire
,” Appl. Phys. Express
11
(5
), 051001
(2018
).26.
S.
Horstmann
,
E.
Irran
, and
W.
Schnick
, “
Synthesis and crystal structure of phosphorus(V) nitride α-P3N5
,” Angew. Chem., Int. Ed. Engl.
36
(17
), 1873
–1875
(1997
).27.
D.
Laniel
,
F.
Trybel
,
A.
Néri
,
Y.
Yin
,
A.
Aslandukov
,
T.
Fedotenko
,
S.
Khandarkhaeva
,
F.
Tasnádi
,
S.
Chariton
,
C.
Giacobbe
,
E. L.
Bright
,
M.
Hanfland
,
V.
Prakapenka
,
W.
Schnick
,
I. A.
Abrikosov
,
L.
Dubrovinsky
, and
N.
Dubrovinskaia
, “
Revealing phosphorus nitrides up to the megabar regime: Synthesis of α′-P3N5, δ-P3N5 and PN2
,” Chem.–Eur. J.
28
(62
), e202201998
(2022
).28.
29.
T.
Mattila
and
A.
Zunger
, “
Predicted bond length variation in wurtzite and zinc-blende InGaN and AlGaN alloys
,” J. Appl. Phys.
85
(1
), 160
–167
(1999
).30.
O.
Ambacher
,
B.
Christian
,
N.
Feil
,
D. F.
Urban
,
C.
Elsässer
,
M.
Prescher
, and
L.
Kirste
, “
Wurtzite ScAlN, InAlN, and GaAlN crystals, a comparison of structural, elastic, dielectric, and piezoelectric properties
,” J. Appl. Phys.
130
(4
), 045102
(2021
).31.
Y.
Tsuda
,
H.
Mouri
,
M.
Araki
,
Y.
Ueta
,
T.
Yuasa
, and
M.
Taneya
, “
Characterization of the GaN-rich side of GaNP grown by metal-organic chemical vapor deposition
,” Phys. Status Solidi B
240
(2
), 404
–407
(2003
).32.
K.
Fehse
,
A.
Dadgar
,
P.
Veit
,
J.
Bläsing
, and
A.
Krost
, “
Metalorganic chemical vapor phase epitaxy and structural properties of Ga1-xPxN on GaN/Si(111) substrates
,” Appl. Phys. A
82
(4
), 733
–735
(2006
).33.
A.
Jain
,
S. P.
Ong
,
G.
Hautier
,
W.
Chen
,
W. D.
Richards
,
S.
Dacek
,
S.
Cholia
,
D.
Gunter
,
D.
Skinner
,
G.
Ceder
, and
K. A.
Persson
, “
Commentary: The Materials Project: A materials genome approach to accelerating materials innovation
,” APL Mater.
1
(1
), 011002
(2013
).34.
H.
Jacobs
and
R.
Krichgässner
, “
Hexamincyclotriphosphazenhemiammoniakat, P3N3(NH2)6 · 0,5 NH3, ein Produkt der Hochdruckammonolyse von weißem Phosphor
,” Z. Anorg. Allg. Chem.
581
(1
), 125
–134
(1990
).35.
E. O.
Huffman
,
G.
Tarbutton
,
K. L.
Elmore
,
W. E.
Cate
,
H. K.
Walters
, Jr., and
G. V.
Elmore
, “
Synthesis of phosphorus nitrides
,” J. Am. Chem. Soc.
76
(24
), 6239
–6243
(1954
).36.
A. V.
Lobanova
,
K. M.
Mazaev
,
R. A.
Talalaev
,
M.
Leys
,
S.
Boeykens
,
K.
Cheng
, and
S.
Degroote
, “
Effect of V/III ratio in AlN and AlGaN MOVPE
,” J. Cryst. Growth
287
(2
), 601
–604
(2006
).37.
J.
Stellmach
,
M.
Frentrup
,
F.
Mehnke
,
M.
Pristovsek
,
T.
Wernicke
, and
M.
Kneissl
, “
MOVPE growth of semipolar (11–22) AlN on m-plane (10–10) sapphire
,” J. Cryst. Growth
355
(1
), 59
–62
(2012
).38.
N.
Kobayashi
,
T.
Makimoto
,
Y.
Yamauchi
, and
Y.
Horikoshi
, “
Flow‐rate modulation epitaxy of GaAs and AlGaAs
,” J. Appl. Phys.
66
(2
), 640
–651
(1989
).39.
X.
Yang
,
S.
Nitta
,
K.
Nagamatsu
,
S.-Y.
Bae
,
H.-J.
Lee
,
Y.
Liu
,
M.
Pristovsek
,
Y.
Honda
, and
H.
Amano
, “
Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy
,” J. Cryst. Growth
482
, 1
–8
(2018
).40.
M. A.
Khan
,
J. N.
Kuznia
,
J. M.
Van Hove
,
N.
Pan
, and
J.
Carter
, “
Observation of a two‐dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN‐AlxGa1−xN heterojunctions
,” Appl. Phys. Lett.
60
(24
), 3027
–3029
(1992
).41.
F.
Semond
,
P.
Lorenzini
,
N.
Grandjean
, and
J.
Massies
, “
High-electron-mobility AlGaN/GaN heterostructures grown on Si(111) by molecular-beam epitaxy
,” Appl. Phys. Lett.
78
(3
), 335
–337
(2001
).© 2024 Author(s). Published under an exclusive license by AIP Publishing.
2024
Author(s)
You do not currently have access to this content.
