With the development of artificial intelligence technology, it remains a challenge to improve the resistive switching performance of next-generation nonvolatile ferroelectric memristor device (FMD). Here, we report an epitaxial Na0.5Bi0.5TiO3 ferroelectric memristor device (NBT-FMD) with temperature sensing. The NBT epitaxial films with strong polarization strength and suitable oxygen vacancy concentration were obtained by temperature adjustment (700 °C). In addition, the function of the spiking-time-dependent plasticity and paired-pulse facilitation is simulated in ferroelectric memristor devices of Pt/NBT/SrRuO3 (SRO)/SrTiO3 (STO). More importantly, we have designed a neuronal circuit to confirm that NBT-FMD can serve as temperature receptors on the human skin, paving the way for bio-inspired application.
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26 February 2024
Research Article|
February 28 2024
A temperature sensing based Na0.5Bi0.5TiO3 ferroelectric memristor device for artificial neural systems
Lei Zhou;
Lei Zhou
(Conceptualization, Data curation, Formal analysis, Investigation, Methodology, Visualization, Writing – original draft)
1
College of Physics Science and Technology, Hebei University
, Baoding 071002, Hebei, China
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Yifei Pei;
Yifei Pei
a)
(Data curation, Formal analysis, Writing – review & editing)
1
College of Physics Science and Technology, Hebei University
, Baoding 071002, Hebei, China
a)Authors to whom correspondence should be addressed: yanxiaobing@ime.ac.cn; peiyifei1993@163.com; and jxguo@hbu.edu.cn
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Changliang Li;
Changliang Li
(Formal analysis, Supervision, Validation, Visualization)
1
College of Physics Science and Technology, Hebei University
, Baoding 071002, Hebei, China
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Hui He;
Hui He
(Data curation, Formal analysis, Investigation, Methodology, Visualization, Writing – original draft)
1
College of Physics Science and Technology, Hebei University
, Baoding 071002, Hebei, China
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Chao Liu;
Chao Liu
(Formal analysis, Investigation, Supervision)
1
College of Physics Science and Technology, Hebei University
, Baoding 071002, Hebei, China
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Yue Hou;
Yue Hou
(Investigation, Project administration)
1
College of Physics Science and Technology, Hebei University
, Baoding 071002, Hebei, China
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Haoyuan Tian;
Haoyuan Tian
(Investigation, Project administration)
1
College of Physics Science and Technology, Hebei University
, Baoding 071002, Hebei, China
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Jianxin Guo
;
Jianxin Guo
a)
(Investigation, Supervision, Validation, Visualization)
1
College of Physics Science and Technology, Hebei University
, Baoding 071002, Hebei, China
a)Authors to whom correspondence should be addressed: yanxiaobing@ime.ac.cn; peiyifei1993@163.com; and jxguo@hbu.edu.cn
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Baoting Liu;
Baoting Liu
(Conceptualization, Investigation)
1
College of Physics Science and Technology, Hebei University
, Baoding 071002, Hebei, China
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Xiaobing Yan
Xiaobing Yan
a)
(Conceptualization, Formal analysis)
1
College of Physics Science and Technology, Hebei University
, Baoding 071002, Hebei, China
2
Key Laboratory of Brain like Neuromorphic Devices and Systems of Hebei Province, College of Electronic Information Engineering, Hebei University
, Baoding 071002, Hebei, China
a)Authors to whom correspondence should be addressed: yanxiaobing@ime.ac.cn; peiyifei1993@163.com; and jxguo@hbu.edu.cn
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a)Authors to whom correspondence should be addressed: yanxiaobing@ime.ac.cn; peiyifei1993@163.com; and jxguo@hbu.edu.cn
Appl. Phys. Lett. 124, 093507 (2024)
Article history
Received:
December 09 2023
Accepted:
February 08 2024
Citation
Lei Zhou, Yifei Pei, Changliang Li, Hui He, Chao Liu, Yue Hou, Haoyuan Tian, Jianxin Guo, Baoting Liu, Xiaobing Yan; A temperature sensing based Na0.5Bi0.5TiO3 ferroelectric memristor device for artificial neural systems. Appl. Phys. Lett. 26 February 2024; 124 (9): 093507. https://doi.org/10.1063/5.0190861
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