We investigate the magnetic properties of La2/3Sr1/3MnO3 (LSMO) membranes released from an SrTiO3 (STO) substrate by selectively etching an Sr4Al2O7 sacrificial buffer layer. The magnetic moment and Curie temperatures (TC) of the released LSMO membranes improve significantly over their substrate-bound counterparts. We attribute these enhancements to suppressing strain and oxygen octahedral rotations that are present in substrate-bound films. Moreover, comparing the magnetic hysteresis loops obtained with magnetic fields applied along several crystallographic orientations demonstrates enhanced (weakened) perpendicular (in-plane) magnetic anisotropy in the released LSMO membranes. Our results contribute to potential applications of released LSMO membranes toward flexible spintronics devices, where high spin polarization and TC are desired.
Skip Nav Destination
,
,
,
,
,
,
,
Article navigation
5 February 2024
Research Article|
February 05 2024
Reduced dead layers and magnetic anisotropy change in La2/3Sr1/3MnO3 membranes released from an SrTiO3 substrate Available to Purchase
Takuma Arai
;
Takuma Arai
a)
(Conceptualization, Data curation, Formal analysis, Investigation, Methodology, Project administration, Visualization, Writing – original draft, Writing – review & editing)
1
Department of Electrical Engineering and Information Systems, The University of Tokyo
, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Search for other works by this author on:
Shingo Kaneta-Takada
;
Shingo Kaneta-Takada
(Conceptualization, Methodology)
1
Department of Electrical Engineering and Information Systems, The University of Tokyo
, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Search for other works by this author on:
Le Duc Anh
;
Le Duc Anh
(Conceptualization, Methodology)
1
Department of Electrical Engineering and Information Systems, The University of Tokyo
, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
2
Center for Spintronics Research Network (CSRN), The University of Tokyo
, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Search for other works by this author on:
Masaki Kobayashi
;
Masaki Kobayashi
(Resources)
1
Department of Electrical Engineering and Information Systems, The University of Tokyo
, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
2
Center for Spintronics Research Network (CSRN), The University of Tokyo
, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Search for other works by this author on:
Munetoshi Seki
;
Munetoshi Seki
(Resources)
1
Department of Electrical Engineering and Information Systems, The University of Tokyo
, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
2
Center for Spintronics Research Network (CSRN), The University of Tokyo
, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Search for other works by this author on:
Hitoshi Tabata
;
Hitoshi Tabata
(Resources)
1
Department of Electrical Engineering and Information Systems, The University of Tokyo
, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
2
Center for Spintronics Research Network (CSRN), The University of Tokyo
, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Search for other works by this author on:
Masaaki Tanaka
;
Masaaki Tanaka
b)
(Funding acquisition, Resources)
1
Department of Electrical Engineering and Information Systems, The University of Tokyo
, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
2
Center for Spintronics Research Network (CSRN), The University of Tokyo
, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
3
Institute for Nano Quantum Information Electronics (NanoQuine), The University of Tokyo
, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
Search for other works by this author on:
Shinobu Ohya
Shinobu Ohya
c)
(Conceptualization, Funding acquisition, Project administration, Resources, Writing – review & editing)
1
Department of Electrical Engineering and Information Systems, The University of Tokyo
, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
2
Center for Spintronics Research Network (CSRN), The University of Tokyo
, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
3
Institute for Nano Quantum Information Electronics (NanoQuine), The University of Tokyo
, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
c)Author to whom correspondence should be addressed: [email protected]
Search for other works by this author on:
Takuma Arai
1,a)
Shingo Kaneta-Takada
1
Le Duc Anh
1,2
Masaki Kobayashi
1,2
Munetoshi Seki
1,2
Hitoshi Tabata
1,2
Masaaki Tanaka
1,2,3,b)
Shinobu Ohya
1,2,3,c)
1
Department of Electrical Engineering and Information Systems, The University of Tokyo
, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
2
Center for Spintronics Research Network (CSRN), The University of Tokyo
, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
3
Institute for Nano Quantum Information Electronics (NanoQuine), The University of Tokyo
, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
c)Author to whom correspondence should be addressed: [email protected]
a)
Electronic mail: [email protected]
b)
Electronic mail: [email protected]
Appl. Phys. Lett. 124, 062403 (2024)
Article history
Received:
October 08 2023
Accepted:
January 15 2024
Citation
Takuma Arai, Shingo Kaneta-Takada, Le Duc Anh, Masaki Kobayashi, Munetoshi Seki, Hitoshi Tabata, Masaaki Tanaka, Shinobu Ohya; Reduced dead layers and magnetic anisotropy change in La2/3Sr1/3MnO3 membranes released from an SrTiO3 substrate. Appl. Phys. Lett. 5 February 2024; 124 (6): 062403. https://doi.org/10.1063/5.0180288
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Attosecond physics and technology
O. Alexander, D. Ayuso, et al.
High breakdown voltage normally off Ga2O3 transistors on silicon substrates using GaN buffer
Mritunjay Kumar, Vishal Khandelwal, et al.
Related Content
Toward ultrathin ferromagnetic metal of (110) La2/3Sr1/3MnO3 thin films
Appl. Phys. Lett. (September 2020)
Reduction of the magnetic dead layer and observation of tunneling magnetoresistance in La0.67Sr0.33MnO3-based heterostructures with a LaMnO3 layer
Appl. Phys. Lett. (May 2017)
Cooperatively tuning magnetic anisotropy and colossal magnetoresistance via atomic-scale buffer layers in highly strained La0.7Sr0.3MnO3 films
Appl. Phys. Lett. (April 2024)
Emergent quasi-two-dimensional ferromagnetic state with perpendicular magnetic anisotropy at La0.7Sr0.3MnO3/SrCuO2 interface
Appl. Phys. Rev. (April 2024)
Defects induced huge magnetoresistance in epitaxial La1–xSrxMnO3 thin films deposited by magnetic sputtering
Appl. Phys. Lett. (October 2019)