We present a design for a quantum photodetector operating in the terahertz range, at 3.45 THz (15 meV, 87 μm). Our device relies on biased GaAs/AlGaAs heterostructure, designed to exploit LO phonon scattering as an extraction mechanism. In our design, the external potential due to the applied bias forms an extraction miniband and allows accommodating an LO phonon transition (36 meV) and use it as an extraction mechanism, even though its energy exceeds the detector's absorbing transition at 15 meV. Spectral-resolved measurements performed on arrays of patch antenna microcavities reveal a peak photocurrent at the designed photon energy with a responsivity of 80 mA/W at 20 K. The maximum operating temperature of the photodetector is found to be 40 K. Detector characterizations were performed both with a black-body source as well as with a terahertz quantum cascade laser emitting at 3.5 THz.
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5 February 2024
Research Article|
February 09 2024
THz quantum well photodetector based on LO-phonon scattering-assisted extraction
J. Pérez-Urquizo
;
J. Pérez-Urquizo
a)
(Conceptualization, Data curation, Formal analysis, Investigation, Methodology, Writing – original draft)
1
Laboratoire de Physique de l’École Normale Supérieure ENS, Université PSL, CNRS, Sorbonne Université, Université de Paris
, F-75005 Paris, France
a)Author to whom correspondence should be addressed: [email protected]
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D. Gacemi
;
D. Gacemi
(Data curation, Methodology, Resources)
1
Laboratoire de Physique de l’École Normale Supérieure ENS, Université PSL, CNRS, Sorbonne Université, Université de Paris
, F-75005 Paris, France
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Z. Z. Zhang
;
Z. Z. Zhang
(Resources)
2
Key Laboratory of Terahertz Solid State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
, 865 Changning Road, Shanghai 200050, China
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B. B. Liu;
B. B. Liu
(Resources)
2
Key Laboratory of Terahertz Solid State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
, 865 Changning Road, Shanghai 200050, China
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D. B. But
;
D. B. But
(Methodology)
3
CENTERA Laboratories, Institute of High Pressure Physics PAS
, Warsaw, Poland
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D. Yavorskiy
;
D. Yavorskiy
(Methodology)
3
CENTERA Laboratories, Institute of High Pressure Physics PAS
, Warsaw, Poland
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J. Łusakowski
;
J. Łusakowski
(Methodology)
4
Faculty of Physics, University of Warsaw
, ul. Pasteura 5, Warsaw 02-093, Poland
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W. Knap
;
W. Knap
(Methodology)
3
CENTERA Laboratories, Institute of High Pressure Physics PAS
, Warsaw, Poland
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H. Li
;
H. Li
(Funding acquisition, Methodology)
2
Key Laboratory of Terahertz Solid State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
, 865 Changning Road, Shanghai 200050, China
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Y. Todorov
Y. Todorov
(Conceptualization, Formal analysis, Investigation, Methodology, Supervision, Writing – review & editing)
1
Laboratoire de Physique de l’École Normale Supérieure ENS, Université PSL, CNRS, Sorbonne Université, Université de Paris
, F-75005 Paris, France
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a)Author to whom correspondence should be addressed: [email protected]
Appl. Phys. Lett. 124, 061111 (2024)
Article history
Received:
September 27 2023
Accepted:
January 17 2024
Citation
J. Pérez-Urquizo, D. Gacemi, Z. Z. Zhang, B. B. Liu, D. B. But, D. Yavorskiy, J. Łusakowski, W. Knap, H. Li, Y. Todorov; THz quantum well photodetector based on LO-phonon scattering-assisted extraction. Appl. Phys. Lett. 5 February 2024; 124 (6): 061111. https://doi.org/10.1063/5.0178516
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