β-Ga2O3, despite its ultra-wide bandgap and excellent electrical properties, requires heterogeneous integration with high thermal conductivity substrates like SiC for high-power electronics applications due to its naturally low thermal conductivity. Accurately characterizing the channel temperature in β-Ga2O3-based devices is challenging due to infrared transparency in ultra-wide bandgap semiconductors. Our study employs three-dimensional Raman thermography to investigate the thermal behavior of β-Ga2O3-on-SiC (GaOISiC) and β-Ga2O3 bulk Schottky barrier diodes (SBDs) at various power levels. The ultrathin β-Ga2O3 epilayer enables the extraction of near-junction temperature within the GaOISiC SBD. Moreover, temperature profiles were obtained both laterally across the device channel and depth-wise from the junction to the substrate. The GaOISiC SBD exhibits a thermal resistance of about only one-third that of the β-Ga2O3 bulk SBD. An electrothermal model was used to calculate detailed electrical and temperature field distributions and verify the accuracy of the Raman temperature mapping. This work highlights the advantages of Raman thermography combined with electrothermal simulations in the accurate temperature characterization of β-Ga2O3-based devices and demonstrates the benefits of heterogeneous integration for substantially improved heat dissipation.

1.
M.
Higashiwaki
,
K.
Sasaki
,
A.
Kuramata
,
T.
Masui
, and
S.
Yamakoshi
,
Appl. Phys. Lett.
100
(
1
),
013504
(
2012
).
2.
N.
Kumar
,
C.
Joishi
,
Z.
Xia
,
S.
Rajan
, and
S.
Kumar
,
IEEE Trans. Electron Devices
66
(
12
),
5360
5366
(
2019
).
3.
S. J.
Pearton
,
J.
Yang
,
P. H.
Cary
,
F.
Ren
,
J.
Kim
,
M. J.
Tadjer
, and
M. A.
Mastro
,
Appl. Phys. Rev.
5
(
1
),
011301
(
2018
).
4.
K.
Konishi
,
K.
Goto
,
H.
Murakami
,
Y.
Kumagai
,
A.
Kuramata
,
S.
Yamakoshi
, and
M.
Higashiwaki
,
Appl. Phys. Lett.
110
(
10
),
103506
(
2017
).
5.
M. D.
Santia
,
N.
Tandon
, and
J. D.
Albrecht
,
Appl. Phys. Lett.
107
(
4
),
041907
(
2015
).
6.
X. C.
Guo
,
N. H.
Hao
,
D. Y.
Guo
,
Z. P.
Wu
,
Y. H.
An
,
X. L.
Chu
,
L. H.
Li
,
P. G.
Li
,
M.
Lei
, and
W. H.
Tang
,
J. Alloy. Compd.
660
,
136
140
(
2016
).
7.
W.
Xu
,
T.
You
,
Y.
Wang
,
Z.
Shen
,
K.
Liu
,
L.
Zhang
,
H.
Sun
,
R.
Qian
,
Z.
An
,
F.
Mu
,
T.
Suga
,
G.
Han
,
X.
Ou
,
Y.
Hao
, and
X.
Wang
,
Fundam. Res.
1
(
6
),
691
696
(
2021
).
8.
W.
Xu
,
Y.
Wang
,
T.
You
,
X.
Ou
,
G.
Han
,
H.
Hu
,
S.
Zhang
,
F.
Mu
,
T.
Suga
,
Y.
Zhang
,
Y.
Hao
, and
X.
Wang
, in
IEEE International Electron Devices Meeting (IEDM)
(
IEEE
,
2019
), pp.
12.5.1
12.5.4
.
9.
Y.
Wang
,
W.
Xu
,
G.
Han
,
T.
You
,
F.
Mu
,
H.
Hu
,
Y.
Liu
,
X.
Zhang
,
H.
Huang
,
T.
Suga
,
X.
Ou
,
X.
Ma
, and
Y.
Hao
,
J. Phys. D
54
(
3
),
034004
(
2021
).
10.
Z.
Shen
,
W.
Xu
,
Y.
Chen
,
J.
Lin
,
Y.
Xie
,
K.
Huang
,
T.
You
,
G.
Han
, and
X.
Ou
,
Sci. China-Mater.
66
(
2
),
756
763
(
2023
).
11.
T. J.
Bajzek
,
IEEE Instrum. Meas. Mag.
8
(
1
),
35
40
(
2005
).
12.
J.
Joh
,
J. A. D.
Alamo
,
U.
Chowdhury
,
T. M.
Chou
,
H. Q.
Tserng
, and
J. L.
Jimenez
,
IEEE Trans. Electron Devices
56
(
12
),
2895
2901
(
2009
).
13.
A.
Sarua
,
H.
Ji
,
M.
Kuball
,
M. J.
Uren
,
T.
Martin
,
K. P.
Hilton
, and
R. S.
Balmer
,
IEEE Trans. Electron Devices
53
(
10
),
2438
2447
(
2006
).
14.
M.
Kuball
and
J. W.
Pomeroy
,
IEEE Trans. Device Mater. Reliab.
16
(
4
),
667
684
(
2016
).
15.
J. W.
Pomeroy
,
M.
Bernardoni
,
D. C.
Dumka
,
D. M.
Fanning
, and
M.
Kuball
,
Appl. Phys. Lett.
104
(
8
),
083513
(
2014
).
16.
S. H.
Kim
,
D.
Shoemaker
,
B.
Chatterjee
,
A. J.
Green
,
K. D.
Chabak
,
E. R.
Heller
,
K. J.
Liddy
,
G. H.
Jessen
,
S.
Graham
, and
S.
Choi
,
IEEE Trans. Electron Devices
69
(
3
),
1251
1257
(
2022
).
17.
R. B.
Simon
,
J. W.
Pomeroy
, and
M.
Kuball
,
Appl. Phys. Lett.
104
(
21
),
213503
(
2014
).
18.
W.
Li
,
J.
Huang
,
B.
Han
,
C.
Xie
,
X.
Huang
,
K.
Tian
,
Y.
Zeng
,
Z.
Zhao
,
P.
Gao
,
Y.
Zhang
,
T.
Yang
,
Z.
Zhang
,
S.
Sun
, and
Y.
Hou
,
Adv. Sci.
7
(
16
),
2001080
(
2020
).
19.
M. C.
Mathpal
,
A. K.
Tripathi
,
M. K.
Singh
,
S. P.
Gairola
,
S. N.
Pandey
, and
A.
Agarwal
,
Chem. Phys. Lett.
555
,
182
186
(
2013
).
You do not currently have access to this content.