Polarization-sensitive ultraviolet (UV) photodetectors have attracted significant interest due to the broad applications in UV polarized imaging. However, the conventional UV photodetectors to realize polarization-sensitive properties require integrated filters and polarizers, which increase the system size and cost. In this work, self-powered polarization-sensitive UV photodetectors (PDs) with high efficiency and ultrafast response speed based on the MoS2/a-GaN heterojunction have been proposed and applied to UV polarized imaging. Benefiting from the type-I band alignment formed by MoS2/a-GaN, and the reduction of interfacial trapping effect, the PDs exhibit remarkable photovoltaic and polarization sensitivity under UV light at zero bias voltage, including a high responsivity of 15 mA/W, a specific detectivity of 4.7 × 1013 Jones, an ultrafast response speed of 4/8 ms, and a high polarization ratio of 1.5. Furthermore, the as-fabricated PDs demonstrate polarization-sensitive UV imaging. This work paves an approach for the development of high-performance polarization-sensitive UV PDs and offers a feasible way for the development of UV polarized imaging based on anisotropic materials.
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17 June 2024
Research Article|
June 20 2024
Polarization-sensitive self-powered MoS2/a-GaN heterojunction photodetectors for ultraviolet polarized imaging
Tingjun Lin;
Tingjun Lin
(Data curation, Formal analysis, Visualization, Writing – original draft)
Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology
, Guangzhou 510641, China
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Wenliang Wang
Wenliang Wang
a)
(Conceptualization, Funding acquisition, Investigation, Project administration, Resources, Validation, Writing – review & editing)
Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology
, Guangzhou 510641, China
a)Author to whom correspondence should be addressed: [email protected]
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a)Author to whom correspondence should be addressed: [email protected]
Appl. Phys. Lett. 124, 252102 (2024)
Article history
Received:
April 25 2024
Accepted:
June 11 2024
Citation
Tingjun Lin, Wenliang Wang; Polarization-sensitive self-powered MoS2/a-GaN heterojunction photodetectors for ultraviolet polarized imaging. Appl. Phys. Lett. 17 June 2024; 124 (25): 252102. https://doi.org/10.1063/5.0215741
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