In this work, we report on the selective area growth (SAG) of InGaN multiple quantum well (MQW) structures to completely suppress the phenomenon of the Stokes shift in monolithically integrated photonic chips. The original green MQW region is designed as the integrated photodetector (PD), while the SAG blue MQW region acts as the integrated light-emitting diode (LED). The detection spectra of the PD can completely cover the emission spectra of the LED, greatly improving the on-chip optical connection by the complete suppression of the Stokes shift. Thus, the bottleneck of on-chip optical connection based on spectra-tail overlap in integrated photonic chips has been broken. Under the same operating current, the photocurrent of the SAG integrated PD reaches 11.8 μA, while the conventional chip achieves only 0.6 μA. By SAG method, the photo-to-dark current ratio of integrated PD exhibits about two orders of magnitude increase under 0 V bias. Undoubtedly, the SAG technology provides a strategy to further improve the on-chip optical signal transmission efficiency of the MQW structure integrated photonic chips.
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17 June 2024
Research Article|
June 18 2024
Selective area grown photonic integrated chips for completely suppressing the Stokes shift
Rui He
;
Rui He
(Writing – original draft)
1
Research and Development Center for Wide Bandgap Semiconductors, Institute of Semiconductors, Chinese Academy of Sciences
, Beijing 100083, China
2
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences
, Beijing 100049, China
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Yongxiang Wang;
Yongxiang Wang
(Data curation)
3
College of Bioresources Chemical and Materials Engineering, Shaanxi University of Science and Technology
, Xi'an 710021, Shaanxi, China
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Yijian Song;
Yijian Song
(Formal analysis)
1
Research and Development Center for Wide Bandgap Semiconductors, Institute of Semiconductors, Chinese Academy of Sciences
, Beijing 100083, China
2
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences
, Beijing 100049, China
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Junxue Ran
;
Junxue Ran
(Methodology)
1
Research and Development Center for Wide Bandgap Semiconductors, Institute of Semiconductors, Chinese Academy of Sciences
, Beijing 100083, China
2
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences
, Beijing 100049, China
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Jiankun Yang;
Jiankun Yang
(Methodology)
1
Research and Development Center for Wide Bandgap Semiconductors, Institute of Semiconductors, Chinese Academy of Sciences
, Beijing 100083, China
2
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences
, Beijing 100049, China
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Jin Wu;
Jin Wu
(Methodology)
4
Jihua Lab
, Foshan 528200, China
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Qiang Hu;
Qiang Hu
(Software)
1
Research and Development Center for Wide Bandgap Semiconductors, Institute of Semiconductors, Chinese Academy of Sciences
, Beijing 100083, China
4
Jihua Lab
, Foshan 528200, China
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Xuecheng Wei
;
Xuecheng Wei
(Formal analysis)
1
Research and Development Center for Wide Bandgap Semiconductors, Institute of Semiconductors, Chinese Academy of Sciences
, Beijing 100083, China
2
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences
, Beijing 100049, China
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Junxi Wang;
Junxi Wang
(Conceptualization)
1
Research and Development Center for Wide Bandgap Semiconductors, Institute of Semiconductors, Chinese Academy of Sciences
, Beijing 100083, China
2
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences
, Beijing 100049, China
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Tongbo Wei
Tongbo Wei
a)
(Writing – review & editing)
1
Research and Development Center for Wide Bandgap Semiconductors, Institute of Semiconductors, Chinese Academy of Sciences
, Beijing 100083, China
2
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences
, Beijing 100049, China
a)Author to whom correspondence should be addressed: [email protected]
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a)Author to whom correspondence should be addressed: [email protected]
Appl. Phys. Lett. 124, 251103 (2024)
Article history
Received:
April 15 2024
Accepted:
June 09 2024
Citation
Rui He, Yongxiang Wang, Yijian Song, Junxue Ran, Jiankun Yang, Jin Wu, Qiang Hu, Xuecheng Wei, Junxi Wang, Tongbo Wei; Selective area grown photonic integrated chips for completely suppressing the Stokes shift. Appl. Phys. Lett. 17 June 2024; 124 (25): 251103. https://doi.org/10.1063/5.0213979
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