Organic phototransistors (OPTs) have emerged as promising candidates for advanced photodetector applications due to their high sensitivity, flexibility, and low-power operation. However, the photodetection performance of traditional OPTs with lateral structures is often compromised by extended charge carrier transport paths, leading to increased carrier trapping or recombination. Addressing this challenge, we introduce vertical organic phototransistors (VOPTs) with significantly shorter channel lengths (about 150 nm), aiming to enhance photoresponse performance. Through the fabrication of VOPTs incorporating PDVT-10:Y6 bulk heterojunctions, and a detailed investigation into the optimization strategies, we achieved a substantial improvement in device performance. The optimized VOPTs exhibited a photoresponsivity of 0.4 A/W, a specific detectivity of 1.2 × 1012 Jones under 808 nm near-infrared light, coupled with a rapid response time of approximately 20 ms—among the fastest reported for VOPTs to date. This study not only advances the understanding of VOPT device physics but also highlights the potential of integrating bulk heterojunctions for the development of high-performance VOPTs.
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10 June 2024
Research Article|
June 11 2024
High-performance near-infrared vertical organic phototransistors through bulk heterojunction integration
Longfeng Zhao;
Longfeng Zhao
(Investigation, Methodology, Writing – original draft)
1
School of Physics and Electronics, Hunan University
, Changsha 410082, China
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Haihong Xie
;
Haihong Xie
(Investigation, Methodology)
1
School of Physics and Electronics, Hunan University
, Changsha 410082, China
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Jiangnan Xia
;
Jiangnan Xia
(Investigation, Writing – review & editing)
1
School of Physics and Electronics, Hunan University
, Changsha 410082, China
2
Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University
, Changsha 410082, China
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Yuanyuan Hu
Yuanyuan Hu
a)
(Conceptualization, Data curation, Funding acquisition, Resources, Supervision, Writing – original draft, Writing – review & editing)
1
School of Physics and Electronics, Hunan University
, Changsha 410082, China
2
Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University
, Changsha 410082, China
a)Author to whom correspondence should be addressed: [email protected]
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a)Author to whom correspondence should be addressed: [email protected]
Appl. Phys. Lett. 124, 243301 (2024)
Article history
Received:
March 26 2024
Accepted:
May 22 2024
Citation
Longfeng Zhao, Haihong Xie, Jiangnan Xia, Yuanyuan Hu; High-performance near-infrared vertical organic phototransistors through bulk heterojunction integration. Appl. Phys. Lett. 10 June 2024; 124 (24): 243301. https://doi.org/10.1063/5.0210727
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