Strain provides an additional mechanism in tuning the thermal/electrical properties of nanostructures and therefore has triggered lots of interest in recent years. However, experimental research about the strain effect on the thermal conductivity of nanowires is still limited, especially in the low-temperature range, which is important in understanding the physics of strain-induced regulation in thermal conductivity. Here, we present thermal transport measurements of bent silicon carbide nanowires at temperatures ranging from 20 to 300 K. Reduction in thermal conductivity compared to their straight counterparts is observed. More specifically, the relative change is up to 55% at 20 K and descends with temperature, which is due to the inhomogeneous strain-induced phonon scattering. This study will deepen the understanding of thermal properties in nanostructures with strain.
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10 June 2024
Research Article|
June 10 2024
Strain effect on thermal conductivity of 3C-SiC nanowire
Special Collection:
Advances in Thermal Phonon Engineering and Thermal Management
Wenkang Chen
;
Wenkang Chen
(Data curation, Formal analysis, Methodology, Writing – original draft)
1
Center for Phononics and Thermal Energy Science, China-EU Joint Center for Nanophononics, School of Physics Science and Engineering, Tongji University
, Shanghai 200092, China
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Xiangshui Wu;
Xiangshui Wu
(Data curation, Formal analysis, Investigation, Writing – original draft)
1
Center for Phononics and Thermal Energy Science, China-EU Joint Center for Nanophononics, School of Physics Science and Engineering, Tongji University
, Shanghai 200092, China
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Shichen Deng;
Shichen Deng
(Data curation, Investigation)
2
Department of Physics, National University of Defense Technology
, Changsha 410073, China
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Nuo Yang
;
Nuo Yang
a)
(Formal analysis, Writing – review & editing)
2
Department of Physics, National University of Defense Technology
, Changsha 410073, China
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Xiangfan Xu
Xiangfan Xu
a)
(Conceptualization, Funding acquisition, Project administration, Resources, Supervision, Validation, Writing – review & editing)
1
Center for Phononics and Thermal Energy Science, China-EU Joint Center for Nanophononics, School of Physics Science and Engineering, Tongji University
, Shanghai 200092, China
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Appl. Phys. Lett. 124, 242201 (2024)
Article history
Received:
January 27 2024
Accepted:
May 30 2024
Citation
Wenkang Chen, Xiangshui Wu, Shichen Deng, Nuo Yang, Xiangfan Xu; Strain effect on thermal conductivity of 3C-SiC nanowire. Appl. Phys. Lett. 10 June 2024; 124 (24): 242201. https://doi.org/10.1063/5.0200631
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