The imperative for continuous device miniaturization has heightened the need for logic reconfigurability due to its benefits in circuit design simplification and process optimization. Van der Waals ambipolar transistors, notable for their inherent reconfigurable characteristics, have garnered significant interest for their potential to revolutionize information electronics. Nevertheless, as the semiconductor thickness approaches the 3-nm mark, precise modulation of electrical polarity presents a considerable challenge as minor variations in thickness can lead to significant electrical disparities. Here, we introduce a silicon backend process-compatible approach by employing surface charge transfer doping to skillfully adjust the polarity in ambipolar transistors. This universal method can achieve a controllable p-type doping effect and good electrical symmetry in ambipolar semiconductors. Through careful calibration of the MoO3 dopant layer thickness, we significantly enhance the hole mobility in doped WSe2 field-effect transistors (FETs), increasing it from 8 to 100 cm2 V−1 s−1, surpassing the performance of most non-silicon p-type semiconductors. A thorough temperature-dependent doping characterization elucidates the deeper traps-induced Schottky barrier variation for hole transport, and a reduction in current fluctuation for electron transport in WSe2/MoO3 FETs. Leveraging the precision in electrical polarity control, we demonstrate a complementary logic inverter by integrating two doped ambipolar FETs on a single monolithic channel. This advancement paves the way for quasi-forksheet structures and underscores the benefits in evolving advanced processing technologies, steering toward scalable, cost-effective, and efficient electronic device fabrication.
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20 May 2024
Research Article|
May 22 2024
Controllable carrier transfer modulation of ambipolar van der Waals semiconductors toward forksheet FETs
Dong Li
;
Dong Li
(Writing – original draft)
1
School of Microelectronics, Shanghai University
, Jiading, Shanghai 201800, China
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Ruijuan Qi
;
Ruijuan Qi
(Investigation)
2
School of Physics and Electronic Science, East China Normal University
, Shanghai 200241, China
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Pengfei Zhu
;
Pengfei Zhu
(Formal analysis)
1
School of Microelectronics, Shanghai University
, Jiading, Shanghai 201800, China
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Jun Wang
;
Jun Wang
(Investigation)
3
College of Science, Shanghai Institute of Technology
, Shanghai 201418, China
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Jinzhong Zhang
;
Jinzhong Zhang
a)
(Investigation)
2
School of Physics and Electronic Science, East China Normal University
, Shanghai 200241, China
a)Authors to whom correspondence should be addressed: [email protected]; [email protected] and [email protected]
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Jun Li
;
Jun Li
(Supervision)
1
School of Microelectronics, Shanghai University
, Jiading, Shanghai 201800, China
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Longhui Zeng
;
Longhui Zeng
a)
(Writing – review & editing)
4
Key Laboratory of Material Physics, School of Physics and Microelectronics, Zhengzhou University
, Zhengzhou 450052, China
a)Authors to whom correspondence should be addressed: [email protected]; [email protected] and [email protected]
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Mengjiao Li
;
Mengjiao Li
a)
(Investigation, Supervision, Writing – review & editing)
1
School of Microelectronics, Shanghai University
, Jiading, Shanghai 201800, China
a)Authors to whom correspondence should be addressed: [email protected]; [email protected] and [email protected]
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Zhigao Hu
Zhigao Hu
(Data curation, Visualization)
2
School of Physics and Electronic Science, East China Normal University
, Shanghai 200241, China
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a)Authors to whom correspondence should be addressed: [email protected]; [email protected] and [email protected]
Appl. Phys. Lett. 124, 213501 (2024)
Article history
Received:
January 12 2024
Accepted:
May 10 2024
Citation
Dong Li, Ruijuan Qi, Pengfei Zhu, Jun Wang, Jinzhong Zhang, Jun Li, Longhui Zeng, Mengjiao Li, Zhigao Hu; Controllable carrier transfer modulation of ambipolar van der Waals semiconductors toward forksheet FETs. Appl. Phys. Lett. 20 May 2024; 124 (21): 213501. https://doi.org/10.1063/5.0197266
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