Self-powered deep ultraviolet (DUV) photodetectors (PDs) have attracted considerable attention in environmental, industrial, and military fields because of their power-independent and environmentally sensitive photodetection. However, DUV PDs based on traditional thin film structures are limited by the low intrinsic mobility of aluminum-gallium nitride (AlGaN) and the large barrier width of the heterogeneous structure, which makes it difficult to achieve efficient spontaneous separation, resulting in lower responsiveness and a slow response speed. Herein, a 2D/3D DUV PD based on the MXene, niobium carbide (Nb2CTx)/AlGaN van der Waals heterojunctions (vdWHs) has been proposed. The as-prepared DUV PDs revealed self-powered properties with a high responsivity of 101.85 mA W−1, as well as a fast response (rise/decay time of 21/22 ms) under 254 nm DUV illumination, thanks to the excellent electrical conductivity and tunable work function of the MXene. It also showed a large linear dynamic range of 70 dB under −2 V bias because of the strong DUV absorption of MXene/AlGaN vdWH, and the enhanced carrier mobility under high illumination density. This study presents an easy processing route to fabricate high-performance self-powered DUV PDs based on MXene/AlGaN vdWHs for DUV communication.
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25 March 2024
Research Article|
March 29 2024
MXene/AlGaN van der Waals heterojunction self-powered photodetectors for deep ultraviolet communication
Linhao Li
;
Linhao Li
(Conceptualization, Data curation, Formal analysis, Software, Writing – original draft, Writing – review & editing)
1
State Key Laboratory of Luminescent Materials and Devices, South China University of Technology
, Guangzhou 510641, China
2
Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology
, Guangzhou 510641, China
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Yixun He;
Yixun He
(Data curation, Formal analysis, Writing – review & editing)
1
State Key Laboratory of Luminescent Materials and Devices, South China University of Technology
, Guangzhou 510641, China
2
Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology
, Guangzhou 510641, China
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Tingjun Lin;
Tingjun Lin
(Data curation, Formal analysis, Writing – original draft, Writing – review & editing)
1
State Key Laboratory of Luminescent Materials and Devices, South China University of Technology
, Guangzhou 510641, China
2
Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology
, Guangzhou 510641, China
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Hongsheng Jiang;
Hongsheng Jiang
(Data curation, Software, Writing – review & editing)
1
State Key Laboratory of Luminescent Materials and Devices, South China University of Technology
, Guangzhou 510641, China
2
Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology
, Guangzhou 510641, China
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Yi Li;
Yi Li
(Funding acquisition, Resources, Visualization)
2
Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology
, Guangzhou 510641, China
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Tingting Lin
;
Tingting Lin
(Data curation, Software, Writing – review & editing)
1
State Key Laboratory of Luminescent Materials and Devices, South China University of Technology
, Guangzhou 510641, China
3
School of Integrated Circuits, South China University of Technology
, Guangzhou 511442, China
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Changjian Zhou
;
Changjian Zhou
(Supervision, Visualization, Writing – review & editing)
3
School of Integrated Circuits, South China University of Technology
, Guangzhou 511442, China
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Guoqiang Li
;
Guoqiang Li
(Funding acquisition, Writing – review & editing)
1
State Key Laboratory of Luminescent Materials and Devices, South China University of Technology
, Guangzhou 510641, China
2
Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology
, Guangzhou 510641, China
3
School of Integrated Circuits, South China University of Technology
, Guangzhou 511442, China
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Wenliang Wang
Wenliang Wang
a)
(Conceptualization, Funding acquisition, Project administration, Writing – review & editing)
1
State Key Laboratory of Luminescent Materials and Devices, South China University of Technology
, Guangzhou 510641, China
2
Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology
, Guangzhou 510641, China
a)Author to whom correspondence should be addressed: [email protected]
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a)Author to whom correspondence should be addressed: [email protected]
Appl. Phys. Lett. 124, 132105 (2024)
Article history
Received:
February 18 2024
Accepted:
March 20 2024
Citation
Linhao Li, Yixun He, Tingjun Lin, Hongsheng Jiang, Yi Li, Tingting Lin, Changjian Zhou, Guoqiang Li, Wenliang Wang; MXene/AlGaN van der Waals heterojunction self-powered photodetectors for deep ultraviolet communication. Appl. Phys. Lett. 25 March 2024; 124 (13): 132105. https://doi.org/10.1063/5.0203946
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