A number of memristive devices, mainly ReRAMs, have been reported to exhibit a unique non-zero crossing hysteresis attributed to the interplay of resistive and not yet fully understood “capacitive” and “inductive” effects. This work exploits a kinetic simulation model based on a stochastic cloud-in-a-cell method to capture these effects. The model, applied to Au/BiFeO3/Pt/Ti interface-type devices, incorporates vacancy transport and capacitive contributions. The resulting nonlinear response, characterized by hysteresis, is analyzed in detail, providing an in-depth physical understanding of the virtual effects. Capacitive effects are modeled across different layers, revealing their significant role in shaping the non-zero crossing hysteresis behavior. Results from kinetic simulations demonstrate the impact of frequency-dependent impedance on the non-zero crossing phenomenon. This model provides insight into the effects of various device material properties on the non-zero crossing point, such as Schottky barrier height, device area, and oxide layer.
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